Spin-Polarized Transport

Prinz, G. A.

doi:10.1063/1.881459

Cited by 852 publications

(432 citation statements)

References 24 publications

(11 reference statements)

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“…In recent years, magneto electronic devices such as spin valve field sensors and magnetic random access memories have emerged, where both charge and spin of electrons are exploited using spinpolarized currents and spin-dependent conduction 2,3 . The performance of such magneto-electronic devices depends critically on the substantial spin polarization of the ferromagnetic components.…”

Section: Introductionmentioning

confidence: 99%

Calculated electronic structure and x-ray magnetic circular dichroism of CrO₂

Kanchana¹,

Vaitheeswaran²,

Alouani³

2006

J. Phys.: Condens. Matter

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A detailed theoretical study on the electronic structure and magnetic properties of half-metallic ferromagnet CrO2 was carried out by means of relativistic full-potential linear muffin-tin orbital method within the generalized gradient approximation (GGA) to the exchange correlation potential. Our calculation favours the [001] magnetization axis to be the easy axis of magnetization when compared to the [100] axis which is in agreement with the experiments. The calculated spin and orbital magnetic moments of Cr agrees well with the experimental and other theoretical works. The Cr L2,3 x-ray absorption and x-ray magnetic circular dichroism (XMCD) spectra were calculated for both the quantization axis and compared with the experiment. In addition the oxygen K edge and XMCD spectra were also calculated which compares well with the experiments. The XMCD sum rules were used to compute the spin and orbital magnetic moments and results agree quite well with the direct calculation.

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Section: Introductionmentioning

confidence: 99%

Calculated electronic structure and x-ray magnetic circular dichroism of CrO₂

Kanchana¹,

Vaitheeswaran²,

Alouani³

2006

J. Phys.: Condens. Matter

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“…The spin of electrons and holes in condensed-matter physics is an intensively studied quantum mechanical property as it is the decisive ingredient for spintronic devices [1,2]. Optical orientation by applying circularly polarized light is frequently used to prepare an ensemble of spin polarized carriers [3].…”

Section: Introductionmentioning

confidence: 99%

Photogalvanic effects in quantum wells

Ganichev¹,

Ivchenko²,

Prettl³

2002

Physica E: Low-dimensional Systems and Nanostructures

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Circular and linear photogalvanic e ects induced by far-infrared radiation have been investigated in both n-type and p-type quantum wells (QWs) of various point symmetry groups. The circular photogalvanic e ect arises due to optical spin orientation of free carriers in QWs which results in a directed motion of free carriers in the plane of a QW perpendicular to the direction of light propagation. Due to selection rules the direction of the current is determined by the helicity of the light and can be reversed by switching the helicity from right to left. ?

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“…The electrons carry not only the charge but also the spin and this fact is widely exploited in spintronics [2][3][4]. It should certainly be taken into account when some element of a nanocircuit contains magnetic impurities because an additional scattering then appears [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Electron Transport and Spin Scattering in Very Thin Disordered Metallic Films

Paja

Spisak

2007

Acta Phys. Pol. A

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We consider the electron transport through a very thin disordered metallic film doped with magnetic impurities. We treat the film as a quasi-two--dimensional system with structural disorder where some ions have spins and other are spinless. The interaction of conduction electrons with localized spins is described by means of the exchange term of the Hamiltonian. The scattering is treated in the first Born approximation and the potential is assumed to be the Coulomb screened one. The total effective cross-section is calculated as a sum of the part responsible for the potential scattering and the second part which comes from the spin-spin scattering. The Fermi sphere splits into separate sheets due to the finite size of the system in the z direction, therefore, the cross-section and the relaxation time are calculated for each sheet independently. The total transport relaxation time and the conductivity are obtained as functions of the thickness of the system and the contents of magnetic impurities. Some model calculations have been made for a thin disordered film of copper doped with manganese.

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Spin-Polarized Transport

Cited by 852 publications

References 24 publications

Calculated electronic structure and x-ray magnetic circular dichroism of CrO₂

Calculated electronic structure and x-ray magnetic circular dichroism of CrO₂

Photogalvanic effects in quantum wells

Electron Transport and Spin Scattering in Very Thin Disordered Metallic Films

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Spin-Polarized Transport

Cited by 852 publications

References 24 publications

Calculated electronic structure and x-ray magnetic circular dichroism of CrO2

Calculated electronic structure and x-ray magnetic circular dichroism of CrO2

Photogalvanic effects in quantum wells

Electron Transport and Spin Scattering in Very Thin Disordered Metallic Films

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Product

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Calculated electronic structure and x-ray magnetic circular dichroism of CrO₂

Calculated electronic structure and x-ray magnetic circular dichroism of CrO₂