Spin polarized thermoelectric feature of graphitic carbon nitride nanoribbon: An in-silico study

Spin-thermoelectric properties and giant tunneling magnetoresistance of boron-substituted graphene nanoribbon: a first principle study

“…The G eσ for AFM configuration proportionally increases with temperature. Whereas, for FM configuration G ↓ decreases upon increasing temperature and G ↑ increases with temperature and the magnitude of the G ↑ is comparable with earlier reported result [58]. As a result the G S and G C for FM are almost equal in magnitude and their values decrease on increasing temperature as G ↓ .…”

“…Spindependent ZT and magnetoresistance of the device are investigated based on first principle calculations. g-C 4 N 3 has a FM ground state and it is a half-metal in nature [57], often used as FM electrode for spin-thermoelectric devices in theoretical studies [58,59]. The spin-dependent ZT is calculated as spin component (Z S T) and charge component (Z C T) by aligning the magnetism of electrodes in two different conditions first in FM and then in AFM configurations.…”

Role of dopants in tuning spintronic features of lithium doped g-C4N3@Lin =1 to 4

“…However, in this context graphitic carbon nitride (g-C4N3) is found to be an ideal material to study as it possesses both the characters of metal-free magnetism and half metallicity in spite of being free from any 3d transitional metal elements [12,13]. It is well known that generally 2p electronic systems exhibits non-magnetic character in bulk systems but in case of ultrathin two dimensional structure like g-C4N3 the 2p electrons behave in a very peculiar way to manifest magnetic behaviour associated with half metallicity; which certainly makes it useful as a probable spintronic material [14][15][16][17][18][19][20][21]. In this context, it is worth noting that electronic structure property of g-C4N3 could be suitably tuned in presence of metallic dopants like Li atom.…”