Spin-polarized scanning tunneling microscopy with quantitative insights into magnetic probes

Phark, Soo-hyon; Sander, Dirk

doi:10.1186/s40580-017-0102-5

Cited by 11 publications

(5 citation statements)

References 65 publications

(124 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The difference between the two spins corresponds to the significant magnetic moments in Fe-and Co-adsorbed germanene systems. The theoretically predicted results of the spatial ferromagnetic configuration and the spin magnetic moment can be verified by high-resolution spin-polarized scanning tunneling microscopy (SP-STM) [43,44] and superconducting quantum interference device (SQUID) [45,46] measurements, respectively.…”

Section: Spin Densitymentioning

confidence: 75%

Fundamental Properties of Transition-Metals-Adsorbed Germanene: A DFT Study

Liu

2022

Coatings

View full text Add to dashboard Cite

The transition metal (TM)-absorbed germanene systems enriched by strong chemical bonding are investigated using first-principles calculations. Dedicated calculations include the geometry, preferable adsorption sites, atom-dominated band structure, spin–density distributions, spatial charge distribution, and the projected density of states (DOS). The strong multi-orbital chemical bonds between TMs and Ge atoms can create seriously buckled structures and a non-uniform chemical environment, which are responsible for the unusual electronic properties. Of the three chosen systems, the Fe–Ge and Co–Ge ones possess magnetic properties, while the Ni–Ge system exhibits non-magnetic behavior. The orbital-hybridization-induced characteristics are revealed in van Hove singularities of the DOS.

show abstract

Section: Spin Densitymentioning

confidence: 75%

Fundamental Properties of Transition-Metals-Adsorbed Germanene: A DFT Study

Liu

2022

Coatings

View full text Add to dashboard Cite

show abstract

“…This is most probably arising because we do not use a spin polarized STM tip for these experiments and hence favor tunneling via paired states. 43 The two DOS peaks at −0.8 and −0.5 V are more intriguing as it arises only at the Co adatom. At this energy (i.e., near the valence band edge), only very weak tunnel electron channels can be reached.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…However, the d I /d V curves indicate that the Si-p y p z states play a major part to DOS peak arising from the silicon surface. This is most probably arising because we do not use a spin polarized STM tip for these experiments and hence favor tunneling via paired states . The two DOS peaks at −0.8 and −0.5 V are more intriguing as it arises only at the Co adatom.…”

Section: Resultsmentioning

confidence: 99%

Translational Manipulation of Magnetic Cobalt Adatoms on the Si(100)-2 × 1 Surface at 9 K

et al. 2019

View full text Add to dashboard Cite

The controlled motion of magnetic impurities on semiconductor (SC) surfaces is of crucial importance for atomic scale magnetic devices. Still challenging because of their strong reactivity with SCs, magnetic impurities are usually studied in bulk SCs, thus preventing their manipulation. Here, we show that a single Co adatom can be steadied on the bare Si(100)-2 × 1 surface in a pedestal configuration at low temperature, 9 K, and moved along the reconstructed silicon dimer rows via the use of a scanning tunneling microscope. The electronic characteristics of the Co adatom and its surroundings are investigated via topography and dI/dV measurements. Our findings reveal that the Si−Co bonding involves hybridization between the Si-p and the Co-p x p y orbitals. This configuration indicates that the Co-d orbitals remain weakly hybridized with the silicon atoms. These results are supported by density functional theory calculations where the role of the As dopant is discussed as well as the surface reconstruction. Therefore, we show that the motion direction of the Co adatom can be influenced by the surrounding c(4 × 2) or p(2 × 2) surface reconstruction phases, thus opening future interesting magnetic applications.

show abstract

“…Spin-polarized STM takes advantage of the spin-dependent electron tunneling, which also enables magnetic tunneling junction experiments at the single-atom level. [156][157][158] For photon interconversion experiments, this technique coupled to a time-resolved PL lifetime setup could reveal further insight into singlet fission 159 at the nanoscale or the reverse process of triplet-triplet annihilation due to the modification of the effective conversion rate of spin-triplet pairs into singlet states. [160][161][162] In particular, the proposed role of mediating surface states in the triplet energy transfer process could be directly investigated for both bulk semiconductor and quantum-confined sensitizer systems.…”

Section: Discussionmentioning

confidence: 99%

Probing Semiconductor Properties with Optical Scanning Tunneling Microscopy

Nienhaus

2020

Joule

View full text Add to dashboard Cite

Studying nanoscale photophysical processes is mandatory to fully understand the complex optoelectronic properties in semiconductor materials used in photovoltaics and light emitting diodes. In this perspective, we target specific scanning probe techniques, which combine scanning tunneling microscopy (STM) with optical methods to unravel the localized optoelectronic properties of semiconductors under realistic electric and optical fields, down to the nanoscale. Combining optical spectroscopy with STM yields a powerful platform that allows for simultaneous imaging of the surface morphology and the electronic structure down to the atomic level, a resolution that is otherwise not accessible due to the optical diffraction limit. Incident wavelengths spanning the electromagnetic spectrum from the terahertz region to X-rays have been coupled into the STM tip-sample junction to investigate the nanoscale properties of semiconductor materials, whereas the reverse process of luminescence can give insight on local recombination processes. Imagine the potential of a tool capable of detecting both localized absorption and spontaneous and stimulated emission processes of semiconductor materials at the nanoscale. The role of every atom, defect, or electronic interaction could be disentangled, tailored, or harnessed to its maximum capacity.

show abstract

Spin-polarized scanning tunneling microscopy with quantitative insights into magnetic probes

Cited by 11 publications

References 65 publications

Fundamental Properties of Transition-Metals-Adsorbed Germanene: A DFT Study

Fundamental Properties of Transition-Metals-Adsorbed Germanene: A DFT Study

Translational Manipulation of Magnetic Cobalt Adatoms on the Si(100)-2 × 1 Surface at 9 K

Probing Semiconductor Properties with Optical Scanning Tunneling Microscopy

Contact Info

Product

Resources

About