Spin-polarized multiexcitons in quantum dots in the presence of spin-orbit interaction

Russ, Andreas; Schweidenback, Lars; Yasar, M.; Li, C. H.; Hanbicki, A. T.; Korkusiński, Marek; Κιοσέογλου, Γ.; Jonker, B. T.; Petrou, A.

doi:10.1103/physrevb.84.045312

Cited by 3 publications

(9 citation statements)

References 25 publications

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“…As the temperature is Handbook of Spintronics DOI 10.1007/978-94-007-7604-3_19-1 # Springer Science Business Media Dordrecht (outside the USA) 2015 raised, the resonance is also suppressed and practically vanishes by T = 50 K. These data suggest the existence of an efficient magnetic field-induced spin relaxation mechanism for electrons injected into the QDs at low temperatures. This behavior is interpreted as the optical signature of spin relaxation mediated by spin-orbit interaction [33]. The bias dependence is attributed to the dependence of the spin-orbit interaction Hamiltonian on the p-n junction electric field E, indicating that the spin-orbit interaction is described by the Rashba Hamiltonian [47].…”

Section: Spin-polarized Multiexcitons In the Presence Of Spin-orbit Imentioning

confidence: 97%

“…20 The 3X system (a) Low-spin ground state A, (b) high-spin excited state B, and (c) low-spin excited state C (Reprinted with permission from Ref. [33]. Copyright (2011) by the American Physical Society) Handbook …”

Section: Spin-polarized Multiexcitons In the Presence Of Spin-orbit Imentioning

confidence: 98%

“…First the three-exciton (3X) complex is considered, assuming for simplicity that the 3X states can be expressed in terms of single configurations [33]. The choice of the 3X system may seem an arbitrary one, but the proposed model considers energy configurations close enough for spin-orbit-assisted transitions to be effective and thus accounts for the observed decrease of the optical polarization.…”

Section: Spin-polarized Multiexcitons In the Presence Of Spin-orbit Imentioning

confidence: 99%

“…This process can be described by approximating the self-assembled InAs QD by a two-dimensional harmonic oscillator potential (details appear in the Additional Information and in Ref. [33]). …”

Section: Spin-polarized Multiexcitons In the Presence Of Spin-orbit Imentioning

confidence: 99%

“…] with I(s + ) and I(s À ) the intensity of the positive and negative helicity component, respectively [33]. In quantum dots, the situation is more complicated due to uncertainties in the dots' shape.…”

Section: à2mentioning

confidence: 99%

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Electrical Spin Injection into InGaAs Quantum Dots

Κιοσέογλου¹,

Li²,

Jonker³

2015

Handbook of Spintronics

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The electrical injection of spin-polarized electrons from ferromagnetic Fe contacts into self-assembled InGaAs quantum dots (QDs) incorporated in GaAs/AlGaAs spin light-emitting diode (spin-LED) structures is summarized here. The emissions from the ensemble QDs are efficient and broad in energy due to inhomogeneous broadening (QD size distribution). The circular polarization was measured as functions of current, magnetic field, and temperature. Electrical spin injection at room temperature was achieved, and the spin polarization of the QD emission was found to be remarkably insensitive to temperature. Robust spin polarization was also found in the emission from the InAs wetting layer (WL). At low temperatures, a sharp drop in QD polarization at fields around 5 T is observed, attributed to an efficient magnetic field-induced spin relaxation mechanism involving a two-step process when the dots are occupied by three electron-hole pairs. A modified growth method was also employed to produce low-density and high-uniformity dots to study the spin population of individual shell states. Sequential filling of the s-, p-, d-, and f-shells and the control of their polarization were demonstrated using a spinpolarized current from the Fe contact, and the s-p and p-d intershell exchange energies were determined. These results demonstrate that the spin polarization in InGaAs QDs is robust and can be controlled by a spin-polarized electrical current, an important step toward utilizing QDs in next-generation devices for information processing. List of Abbreviations 2DEG2-dimensional electron gas

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Section: Spin-polarized Multiexcitons In the Presence Of Spin-orbit Imentioning

confidence: 97%

Section: Spin-polarized Multiexcitons In the Presence Of Spin-orbit Imentioning

confidence: 98%

Section: Spin-polarized Multiexcitons In the Presence Of Spin-orbit Imentioning

confidence: 99%

Section: Spin-polarized Multiexcitons In the Presence Of Spin-orbit Imentioning

confidence: 99%

Section: à2mentioning

confidence: 99%

See 3 more Smart Citations

Electrical Spin Injection into InGaAs Quantum Dots

Κιοσέογλου¹,

Li²,

Jonker³

2015

Handbook of Spintronics

Self Cite

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Engineering of Electromechanical Oxides by Symmetry Breaking

Zhang

Vasiljevic

Bergne

et al. 2023

Adv Materials Inter

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Complex oxides exhibit a wide range of fascinating functionalities, such as ferroelectricity, piezoelectricity, and pyroelectricity, which are indispensable for cutting‐edge electronics, energy, and information technologies. The intriguing physical properties of these complex oxides arise from the complex interplay between lattice, orbital, charge, and spin degrees of freedom. Here, it is reviewed how electromechanical properties can be achieved/improved by artificially breaking the symmetry of centrosymmetric oxides via engineering thermodynamic variables such as stress, strain, electric field, and chemical potentials. The mechanisms that have been utilized to break the inherent symmetry of conventional materials that lead to novel functionalities and applications are explored. It is highlighted that access to “hidden phases,” which otherwise are prohibited, could uncover opportunities to host exotic properties, such as piezoelectricity, pyroelectricity, etc. This review not only reports how to engineer intrinsically nonpolar and centrosymmetric oxides for emergent properties, but also has implications for manipulating polar functional materials for better performance.

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