Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation

Drexler, C.; Belkov, Vassilij; Ashkinadze, B. M.; Olbrich, P.; Zoth, C.; Lechner, V.; Terent'ev, Ya. V.; Yakovlev, D. R.; Karczewski, G.; Wójtowicz, T.; Schuh, Dieter; Wegscheider, Werner; Ganichev, Sergey

doi:10.1063/1.3507896

Cited by 12 publications

(16 citation statements)

References 13 publications

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“…The generation of a spin-polarized current due to the MPGE may be discussed in the frame of a recently proposed model for the spin-dependent asymmetric energy relaxation of a nonequilibrium electron gas heated by, for example, THz or microwave radiation. 10,44 Free electrons are excited to higher-energy states by absorbing radiation and then relax into an equilibrium state by emitting phonons. Figure 6 sketches the hot electron energy relaxation processes in the two spin subbands (s y = ±1/2) that are split due to the Zeeman effect in the presence of an external magnetic field.…”

Section: Linear Mpgementioning

confidence: 99%

Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1−xAs quantum well structures

et al. 2011

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We report on the study of the linear and circular magnetogyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé factor g * depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most QW widths, the MPGEs are mainly driven by spin-related mechanisms, which results in a photocurrent proportional to the g * factor. In structures with a vanishingly small g * factor, however, linear and circular MPGE are also detected, proving the existence of orbital mechanisms.

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Section: Linear Mpgementioning

confidence: 99%

Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1−xAs quantum well structures

et al. 2011

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“…In diluted magnetic semiconductors (DMSs), exchange interactions between localized magnetic impurities and delocalized charge carriers give rise to various technologically important effects including giant spin splittings of the semiconductor band structure, [1][2][3] exciton spin polarization, [4][5][6][7] spin-polarized electrical currents, 8,9 excitonic magnetic polarons, [10][11][12][13][14][15][16] and carrier-controlled magnetism. [17][18][19][20] Within the past decade, attention has turned to magnetically doped semiconductor nanostructures like colloidal or self-assembled DMS quantum dots (QDs), 10,[21][22][23] motivated in part by potential quantum optics or information processing technologies.…”

Section: Introductionmentioning

confidence: 99%

Orbital pathways for Mn2+-carriersp−dexchange in diluted magnetic semiconductor quantum dots

et al. 2011

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Abstract. Manganese-carrier magnetic exchange interactions in strongly quantum confined -conduction-band-electron interaction is described well using the recently proposed ferromagnetic kinetic s-s exchange pathway. Antiferromagnetic kinetic s-d exchange interactions previously proposed to become dominant in quantum confined diluted magnetic semiconductors (DMSs) have been evaluated quantitatively by both DFT and perturbation theory and are found to be weak compared to the ferromagnetic s-s interaction, even in these strongly confined QDs. The magnitudes of the mean-field exchange parameters are found to be nearly independent of quantum confinement over this range of QD diameters, and the dominant orbital pathways are not fundamentally altered by quantum confinement.i.

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“…To explore the magnetic properties of the 2DEG, we investigated spin polarized electric currents induced by microwave (mw) radiation. 8,9 Our measurements show that hybrid AlSb/InAs/(Zn,Mn)Te QWs are characterized by enhanced magnetic properties which can be changed by tuning of the spatial position of Mn-doping layer as well as by the variation of temperature.The structures were grown on (001)-oriented GaAs semiinsulating substrates at temperature of 280 C. For the fabrication of AlSb/InAs/(Zn,Mn)Te heterovalent structures with Mn-containing barriers, we used two separated MBE setups. The first, Riber 32P, was employed to obtain the III-V part consisting of the 0.2 lm-thick GaAs and 2 lm-thick GaSb buffer layers capped with a 4 nm-thick AlSb barrier and a 15 nm-thick InAs QW (two last layers have common InSb-like interface).…”

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confidence: 82%

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Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures

Terent'ev

Zoth

Belkov

et al. 2011

Applied Physics Letters

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The concept of spin-based electronics demands heterostructures possessing high electron mobility, pronounced ferromagnetic properties, and strong spin-orbit interaction (SOI).1,2 In particular, manganese doped diluted magnetic semiconductors (DMS) showing high Curie temperature and large Landé factor are in the focus of current research. While enhanced magnetic properties have been obtained in (Cd,Mn)Te-and (Ga,Mn)As-based quantum wells (QWs), the SOI in these materials is rather small. Thus, realization of DMS heterostructures based on materials which possess a strong SOI, e.g., InAs, becomes important. Most recently, it has been demonstrated that the incorporation of Mn into a heterostructure device containing an InAlAs/InGaAs QW leads to a two-dimensional hole gas.3 In these structures, the Mn ions are in close proximity to the InGaAs channel hosting the hole gas. While DMS hole systems with strong SOI have been realized and demonstrate very interesting magnetotransport properties, 4 the fabrication of InAs-based DMS with high mobility two-dimensional electron gas (2DEG) channels is still a challenge. The 2DEG is characterized by a simple parabolic band structure and much higher mobility compared to that of the holes, even in Mn-doped DMS structures like (Cd,Mn)Te QW (Ref. 5) features making 2DEG systems attractive for various applications. The only In(Mn)As-based superlattice with electron mobility l from 10 2 to 10 3 cm 2 /Vs has been realized in Ref. 6. Here, we report on the fabrication of Mn modulation doped structures with an InAs 2DEG channel. The QWs were grown applying III-V/II-VI "hybrid" technique following the recipes given in Ref. 7. The Mn layers have been inserted into the II-VI barrier. To explore the magnetic properties of the 2DEG, we investigated spin polarized electric currents induced by microwave (mw) radiation. 8,9 Our measurements show that hybrid AlSb/InAs/(Zn,Mn)Te QWs are characterized by enhanced magnetic properties which can be changed by tuning of the spatial position of Mn-doping layer as well as by the variation of temperature.The structures were grown on (001)-oriented GaAs semiinsulating substrates at temperature of 280 C. For the fabrication of AlSb/InAs/(Zn,Mn)Te heterovalent structures with Mn-containing barriers, we used two separated MBE setups. The first, Riber 32P, was employed to obtain the III-V part consisting of the 0.2 lm-thick GaAs and 2 lm-thick GaSb buffer layers capped with a 4 nm-thick AlSb barrier and a 15 nm-thick InAs QW (two last layers have common InSb-like interface). A (2.5 nm-GaSb/2.5 nm-AlSb) 10 superlattice was placed within the first third of the GaSb buffer to suppress propagation of misfit-induced threading dislocations. The II-VI parts of the structures were deposited pseudomorphically on the III-V part in the second two-chambers MBE setup (Semiteq) after the ex-situ sulfur chemical passivation in a 1M Na 2 S 9H 2 O solution of the top InAs layer. The coherent growth of ZnTe on InAs was initiated by simultaneous opening of Zn and Te fluxes onto ...

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Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation

Cited by 12 publications

References 13 publications

Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1−xAs quantum well structures

Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1−xAs quantum well structures

Orbital pathways for Mn2+-carriersp−dexchange in diluted magnetic semiconductor quantum dots

Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures

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