Spin-photon entanglement interfaces in silicon carbide defect centers

Economou, Sophia E.; Dev, Pratibha

doi:10.1088/0957-4484/27/50/504001

Cited by 45 publications

(42 citation statements)

References 45 publications

(71 reference statements)

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“…A third candidate architecture that we will discuss is negatively charged NV color centers in diamond or silicon carbide. The relevant energy levels of an NV center in diamond are shown in figure 11 [82]. Optical pumping initializes the NV into the state ñ |0 , and microwave driving subsequently brings the system into the metastable = | | J 1 z qubit subspace, spanned by ñ ñ | |1 , 1 .…”

Section: Experimental Realizationsmentioning

confidence: 99%

Generation of arbitrary all-photonic graph states from quantum emitters

2019

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We present protocols to generate arbitrary photonic graph states from quantum emitters that are in principle deterministic. We focus primarily on two-dimensional cluster states of arbitrary size due to their importance for measurement-based quantum computing. Our protocols for these and many other types of two-dimensional graph states require a linear array of emitters in which each emitter can be controllably pumped, rotated about certain axes, and entangled with its nearest neighbors. We show that an error on one emitter produces a localized region of errors in the resulting graph state, where the size of the region is determined by the coordination number of the graph. We describe how these protocols can be implemented for different types of emitters, including trapped ions, quantum dots, and nitrogen-vacancy centers in diamond. is a 2×m cluster state, where m is the number of cycles. Schemes to create ladder-type cluster states using trapped ions have also been proposed [29]. However, for universal quantum computation, a larger twodimensional grid (n by m, with n, m?2) is needed; moreover, fault-tolerant universal computation requires a three-dimensional grid [30]. One interesting proposal to create a larger two-dimensional grid using feedback and atom-photon interactions in a cavity has been put forward [31]. However, this approach requires coupling the emitter to a chiral waveguide, which has yet to be demonstrated experimentally with high efficiency.In this paper, we propose an in-principle deterministic method to produce an arbitrary graph state that does not require photon-photon interactions. Instead, the entanglement is created between emitters and then transferred onto photons through optical pumping. This is similar to the idea presented in [28], although here, in addition to being able to create states corresponding to arbitrary graphs of any size, our scheme also allows for the entangling operations between emitters to occur after the photon pumping. Combined with heralding of the emission process, this allows one to perform the typically costly entangling operation only if there is a successful photon emission. Moreover, we show that, in a precise sense, our approach allows for the maximum possible delay in transferring the entanglement from the emitters onto the photons. Our protocol allows for arbitrary sized n by m clusters, given a linear array of n emitters, where each emitter can be entangled with its nearest neighbors. The operations required of the linear array are only a single two-emitter entangling gate and a photon pumping operation. For three-dimensional clusters, which permit fault-tolerant universal computation, our protocol requires a two-dimensional grid of nearest-neighbor connected emitters.This paper is organized as follows. First, a brief overview of the graph state formalism is provided. Second, our new framework to produce arbitrary graph states using emitters, assuming entangling gates are available between emitters, is presented. Then, we discuss concrete realizations ...

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Section: Experimental Realizationsmentioning

confidence: 99%

Generation of arbitrary all-photonic graph states from quantum emitters

2019

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“…The main goal of these studies is to assess these color centers in terms of quantum properties, as such here we only review the emitters that present interesting potentials as a qubit or as a single-photon source or in quantum nanophotonic. The defect labeled V Si (−) known also as TV1-TV3 as reviewed in [26] is studied in [54,56,58,60,62,[69][70][71][72][73][74][75][76][77].…”

Section: Quantum Properties Of Silicon Carbide Color Centers (Ab Initmentioning

confidence: 99%

“…As SiC defects emit at telecommunication wavelength, this makes them excellent candidates for long-range quantum communications. Schemes for spin-photon entanglement in V Si , DV and NV center in SiC defects are proposed [71]. A defect that can support spin-photon entangled interfaces in SiC has been experimentally proved so far as the V Si V2, V1 lines [76], and DV [28,85].…”

Section: Spin-photon Entanglement Interfaces For Quantum Metrology Anmentioning

confidence: 99%

Silicon carbide color centers for quantum applications

2020

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Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.proved to host these types of color centers, we can now determine that the material has approached the quality needed for quantum applications development.The first bulk material studied for applications in quantum technology is diamond. It was possible to isolate single color centers and determine their role for application in quantum technologies. As an example, the nitrogen-vacancy (NV) center [10], hosted by the diamond matrix, has become the leading color center in applications such as quantum sensing [11], which is a more achievable application on the road map towards quantum networks. Further, other color centers such as the Germanium vacancy (GeV) [12] and the siliconvacancy (SiV) [13] in diamond proved to have an enormous potential for quantum optical spin-photon interface due to their narrow bandwidth emission [14]. The wide bandgap of the diamond, together with its weak spinorbit coupling and diluted nuclear-spin bath, gives to diamond color centers a remarkable spin coherence, and isotope engineering can enhance it further, due to the possibility of growing highly pure samples [15]. SiC also enjoys most of these properties, and benefits from mature production protocols on a large scale which are available for silicon, excellent nanofabrication quality [16], and capability of ion implantation without the side effects typical of the diamond, such as graphitization during irradiation [17]. However, diamond has some limitations in this respect in...

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“…For example, V Si has been used for vector magnetometry [20][21][22] and all-optical magnetometry [6]. In addition, this defect has been shown to feature a few different transitions for potential use in spin-photon interfaces [23,24].…”

Section: Introductionmentioning

confidence: 99%

Spin polarization through intersystem crossing in the silicon vacancy of silicon carbide

2019

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Silicon carbide (SiC)-based defects are promising for quantum communications, quantum information processing, and for the next generation of quantum sensors, as they feature long coherence times, frequencies near the telecom, and optical and microwave transitions. For such applications, the efficient initialization of the spin state is necessary. We develop a theoretical description of the spin polarization process by using the intersystem crossing of the silicon vacancy defect, which is enabled by a combination of optical driving, spin-orbit coupling, and interaction with vibrational modes. By using distinct optical drives, we analyze two spin polarization channels. Interestingly, we find that different spin projections of the ground state manifold can be polarized. This work helps to understand initialization and readout of the silicon vacancy and explains some existing experiments with the silicon vacancy center in SiC.

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Spin-photon entanglement interfaces in silicon carbide defect centers

Cited by 45 publications

References 45 publications

Generation of arbitrary all-photonic graph states from quantum emitters

Generation of arbitrary all-photonic graph states from quantum emitters

Silicon carbide color centers for quantum applications

Spin polarization through intersystem crossing in the silicon vacancy of silicon carbide

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