Spin-orbit torque for field-free switching in 
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 crystals

Ovalle, Diego García; Pezo, Armando; Manchon, Aurélien

doi:10.1103/physrevb.107.094422

Cited by 8 publications

(2 citation statements)

References 64 publications

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“…[ 8,9 ] Therefore, a deterministic switching of the FM layer with magnetic easy axis along the y axis is feasible as the positive current can flip the magnetization

\hat{M}

from – y to the + y direction, while the negative current can flip the magnetization

\hat{M}

from + y to the ‐ y direction by the damping like torque

{\vec{\tau }}_{DL} = \tau _{DL}^0\ ( {\hat{M} \times (\hat{\sigma } \times \hat{M}} )

. [ 10 ] The in‐plane magnetic anisotropy (IMA) with easy axis along y axis can be easily achieved in a device with an elliptical shape or by magnetic field annealing process. [ 11 ] However, in the system with perpendicular magnetic anisotropy (PMA), the damping like torque just tends to align the moment along the + y direction when a positive in‐plane current is applied along the + x axis.…”

Section: Introductionmentioning

confidence: 99%

“…[ 11 ] However, in the system with perpendicular magnetic anisotropy (PMA), the damping like torque just tends to align the moment along the + y direction when a positive in‐plane current is applied along the + x axis. [ 10 ] With the removal of the in‐plane current, the moment will relax to the easy axis direction (+ z or ‐ z directions). Thus, there is no deterministic switching of magnetization in the system with PMA.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Zheng,

Fang,

Wen

et al. 2024

Adv Funct Materials

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Spin‐orbit torque resulting from non‐magnetic materials with strong spin‐orbit coupling enables electrically controlled magnetization switching, offering potential applications in ultralow‐power memory and logic devices. However, such switching of perpendicular magnetization usually requires an in‐plane magnetic field along the applied current direction, which limits its use. To address this challenge, an all‐oxide superlattice is designed and fabricated that show both the perpendicular magneto‐crystalline anisotropy and in‐plane magnetic anisotropies induced by interfacial engineering. The results demonstrate that the coexistence of perpendicular and in plane magnetic anisotropy breaks the symmetry and thus enables the pure electrical switching of perpendicular magnetization.

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“…[ 8,9 ] Therefore, a deterministic switching of the FM layer with magnetic easy axis along the y axis is feasible as the positive current can flip the magnetization

\hat{M}

from – y to the + y direction, while the negative current can flip the magnetization

\hat{M}

from + y to the ‐ y direction by the damping like torque

{\vec{\tau }}_{DL} = \tau _{DL}^0\ ( {\hat{M} \times (\hat{\sigma } \times \hat{M}} )

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Zheng,

Fang,

Wen

et al. 2024

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

Field-Free Spin–Orbit Torque Switching in Janus Chromium Dichalcogenides

Vojáček,

Medina Dueñas,

et al. 2024

Nano Lett.

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We predict a very large spin–orbit torque (SOT) capability of magnetic chromium-based transition-metal dichalcogenide (TMD) monolayers in their Janus forms CrXTe, with X = S, Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of ∼100 V nm–1 in non-Janus CrTe2, completely out of experimental reach. By performing transport simulations on carefully derived Wannier tight-binding models, Janus systems are found to exhibit an SOT performance comparable to the most efficient two-dimensional materials, while additionally allowing for field-free perpendicular magnetization switching, due to their reduced in-plane symmetry. Altogether, our findings evidence that magnetic Janus TMDs stand as suitable candidates for ultimate SOT-MRAM devices in an ultracompact self-induced SOT scheme.

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Perspective on spin–orbit torque, topology, and reciprocal and real-space spin textures in magnetic materials and heterostructures

Ghosh

Rüßmann

Mokrousov

et al. 2023

Journal of Applied Physics

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In this Perspective, we present some important aspects of two fundamental concepts of modern spintronics, namely, spin–orbit torque and topology. Although these two fields emerged separately in condensed matter physics, in spintronics they show a deep connection, which requires further theoretical and experimental investigation. The topological features can arise both from momentum space via the wave functions as well as from real space via complex magnetic configurations. These features manifest themselves as unique aspects of different equilibrium and non-equilibrium properties. Physical interactions of such a topological origin can open new possibilities for more efficient mechanisms for manipulating magnetic order with electrical currents, which, in turn, can lead to faster and more efficient spintronics devices.

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Spin-orbit torque for field-free switching in C3v crystals

Cited by 8 publications

References 64 publications

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Field-Free Spin–Orbit Torque Switching in Janus Chromium Dichalcogenides

Perspective on spin–orbit torque, topology, and reciprocal and real-space spin textures in magnetic materials and heterostructures

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