Spin–orbit splitting in the Si(335)–Au surface

Krawiec, Mariusz

doi:10.1016/j.susc.2012.10.024

Cited by 9 publications

(5 citation statements)

References 35 publications

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“…switching between occupied and unoccupied states, results in an inversion of the STM intensity at the step edge. This is fully consistent with one empty and one completely filled step edge orbital [53,65].…”

Section: Silicon Spin Chains In Si(hhk)-au: Current Statussupporting

confidence: 82%

“…For Si(5 5 7)-Au and Si(5 5 3)-Au, a temperature-dependence of the superstructures, accompanied by a band gap opening, was observed and interpreted as a Peierls instability [56][57][58][59]. Triggered by these findings, substantial research efforts have been invested in the development of proper structural models [45,46,[51][52][53][60][61][62][63][64][65] on the basis of which the Rashbatype spin splitting could finally be confirmed [51-53, 55, 66]. However, the explanation of the structural temperature changes as a (conventional) Peierls transition was called into question [49,52,66,67].…”

Section: Brief Historic Summarymentioning

confidence: 98%

“…However, soon after it could be shown with improved experimental resolution that the split bands do not merge at the Fermi level [48], thereby excluding the interpretation as spinon and holon branch of a TLL. In fact, the split parabolic bands are characteristic for all members of the Si(hhk)-Au family [45], and were eventually explained by a Rashba-type spin splitting [49][50][51][52][53][54][55]. It arises from spin-orbit coupling of the reconstruction-induced states in the presence of the inversion symmetry-breaking field at the surface, being enhanced by the heavy Au adatoms.…”

Section: Brief Historic Summarymentioning

confidence: 99%

See 2 more Smart Citations

One-dimensional quantum matter: gold-induced nanowires on semiconductor surfaces

Dudy

Aulbach

Wagner

et al. 2017

J. Phys.: Condens. Matter

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Interacting electrons confined to only one spatial dimension display a wide range of unusual many-body quantum phenomena, ranging from Peierls instabilities to the breakdown of the canonical Fermi liquid paradigm to even unusual spin phenomena. The underlying physics is not only of tremendous fundamental interest, but may also have bearing on device functionality in future micro- and nanoelectronics with lateral extensions reaching the atomic limit. Metallic adatoms deposited on semiconductor surfaces may form self-assembled atomic nanowires, thus representing highly interesting and well-controlled solid-state realizations of such 1D quantum systems. Here we review experimental and theoretical investigations on a few selected prototypical nanowire surface systems, specifically Ge(0 0 1)-Au and Si(hhk)-Au, and the search for 1D quantum states in them. We summarize the current state of research and identify open questions and issues.

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Section: Silicon Spin Chains In Si(hhk)-au: Current Statussupporting

confidence: 82%

Section: Brief Historic Summarymentioning

confidence: 98%

Section: Brief Historic Summarymentioning

confidence: 99%

See 1 more Smart Citation

One-dimensional quantum matter: gold-induced nanowires on semiconductor surfaces

Dudy

Aulbach

Wagner

et al. 2017

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…Another interesting case is provided by a fourth system, Si(335)-Au, which has been extensively studied by other researchers. STM topographic measurements show, [21] and DFT calculations confirm, [22] that half the step-edge orbitals are doubly occupied and half are empty. DFT calculations also show that local spin moments do not form on Si(335)-Au, consistent with the condition proposed above.…”

mentioning

confidence: 92%

Spin Chains and Electron Transfer at Stepped Silicon Surfaces

et al. 2016

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High-index surfaces of silicon with adsorbed gold can reconstruct to form highly ordered linear step arrays. These steps take the form of a narrow strip of graphitic silicon. In some cases-specifically, for Si(553)-Au and Si(557)-Au-a large fraction of the silicon atoms at the exposed edge of this strip are known to be spin-polarized and charge-ordered along the edge. The periodicity of this charge ordering is always commensurate with the structural periodicity along the step edge and hence leads to highly ordered arrays of local magnetic moments that can be regarded as "spin chains." Here, we demonstrate theoretically as well as experimentally that the closely related Si(775)-Au surface hasdespite its very similar overall structure-zero spin polarization at its step edge. Using a combination of density-functional theory and scanning tunneling microscopy, we propose an electron-counting model that accounts for these differences. The model also predicts that unintentional defects and intentional dopants can create local spin moments at Si(hhk)-Au step edges. We analyze in detail one of these predictions and verify it experimentally. This finding opens the door to using techniques of surface chemistry and atom manipulation to create and control silicon spin chains.

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“…Nowadays, it is possible to create magnetism in non-magnetic 1D systems by manipulating atoms at the nanoscale [4]. For such systems on stepped surfaces a substrate unit cell often includes many wire atoms which are placed regularly in each cell but they can interact with different number of surface atoms [4,30] (this modifies electron occupancies of these atoms). In consequence, for some of the wire sites the on-site Coulomb interactions can be more important than for other sites and thus in such systems energy gaps in the total density of states (TDOS) can appear.…”

Section: Introductionmentioning

confidence: 99%

Electronic properties of a quantum wire interacting with a surface: the role of periodically placed impurities

Kwapiński¹

2013

J. Phys.: Condens. Matter

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The transmittance and density of states (DOS) of a quantum wire which is tunnel coupled to the underlying substrate are investigated theoretically using the retarded Green's function method. The wire is composed of periodically placed impurities with Coulomb interactions and is modeled by a tight-binding Hamiltonian within the mean-field approximation. For a given periodicity of impurities along the wire we observe energy gaps in the structure of DOS. These gaps disappear for a wire coupled with the substrate electrode with localized electrons which leads to a metal-insulator transition in the system. Our numerical studies reveal that the transmittance through the system strongly depends on whether or not the substrate electrons are localized.

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Spin–orbit splitting in the Si(335)–Au surface

Cited by 9 publications

References 35 publications

One-dimensional quantum matter: gold-induced nanowires on semiconductor surfaces

One-dimensional quantum matter: gold-induced nanowires on semiconductor surfaces

Spin Chains and Electron Transfer at Stepped Silicon Surfaces

Electronic properties of a quantum wire interacting with a surface: the role of periodically placed impurities

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