2019
DOI: 10.1103/physrevlett.122.217702
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Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon

Abstract: Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each domi… Show more

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Cited by 56 publications
(46 citation statements)
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“…As shown in Fig. 3, for t = 0.1 µeV, measured recently in Si/SiO 2 quantum dots [51,52], the probability of transfer is lowered to ≈ 0.95 at v ≈ 1 µeV/ns when the oscillations caused by interference of two transfer paths are dephased. While in Sec.…”
Section: Resultsmentioning
confidence: 64%
See 1 more Smart Citation
“…As shown in Fig. 3, for t = 0.1 µeV, measured recently in Si/SiO 2 quantum dots [51,52], the probability of transfer is lowered to ≈ 0.95 at v ≈ 1 µeV/ns when the oscillations caused by interference of two transfer paths are dephased. While in Sec.…”
Section: Resultsmentioning
confidence: 64%
“…In presence of quasistatic noise (due to fluctuations of Overhauser splittings in the two dots), or the slowest components of 1/f noise that still lead to finite fluctuation of detuning during the transfer process, these oscillations become dephased, but the transfer probability is lowered compared to t = 0 case. This could make the window of v allowing for highfidelity electron transfer quite narrow in SiMOS devices, where such values of t were measured [51,52], unless one chooses the magnetic field direction and geometry of the structure that makes t smaller.…”
Section: Discussionmentioning
confidence: 99%
“…23 suggests that electrical control of the nuclear-spin qubit should be possible either by relying on an inhomogeneous magnetic field (artificial spin-orbit interaction), or by relying on intrinsic spin-orbit interaction. In a simple phenomenological picture, spin-orbit interaction can influence the dot-donor system in two ways; both effects have been observed in silicon double quantum dots [37][38][39][40] . On the one hand, it renormalizes the g-factor (with few percents), potentially making it anisotropic and different at the donor and in the dot.…”
Section: Discussionmentioning
confidence: 99%
“…On the other hand, the GaAs system can form a large dot, although the short coherence time is problematic [96]. The spin-orbit coupling [97,98] could be problematic in Step II. However, we believe that the study of clever pulse schemes to mitigate spin-orbit coupling is beyond the scope of the paper.…”
Section: Discussionmentioning
confidence: 99%