Spin–orbit coupling in bulk GaAs

Fu, Jiyong; Weng, M. Q.; Wu, Meng

doi:10.1016/j.physe.2008.02.006

Cited by 23 publications

(37 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In order to best fit the experimental points with our numerical trend, we have utilized the spin-orbit coupling coefficient in Γ-valley β Γ as a free parameter, obtaining the best agreement with β Γ =19 eV·Å 3 . This value is only slightly different from the value (23.8 eV·Å 3 ), recently estimated by using the tight binding theory [38]. However this value is still within the reasonable range of values calculated and measured via various methods, as reported in Ref.…”

Section: Comparison With Experiments and With Other Theoretical Approsupporting

confidence: 71%

“…Despite decades of studies, most of theoretical or simulative works have considered only the central valley Γ since the spin-orbit coupling parameters of the upper conduction bands have been only recently theoretically calculated by Fu et al [38]. Monte Carlo approaches have been widely adopted by groups of scientists to study spin polarized transport in 2D channels, heterostructures, quantum wells, quantum wires [27,28,30,31,32,33].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Relaxation of electron spin during high-field transport in GaAs bulk

Spezia¹,

Adorno²,

Pizzolato³

et al. 2010

J. Stat. Mech.

View full text Add to dashboard Cite

Abstract. A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature (40 < T L < 300 K) and doping density (10 13 < n < 10 16 cm −3 ). The decay of the initial non-equilibrium spin polarization of the conduction electrons is investigated as a function of the amplitude of the driving static electric field, ranging between 0.1 and 6 kV/cm, by considering the spin dynamics of electrons in both the Γ and the upper valleys of the semiconductor. Doping density considerably affects spin relaxation at low temperature and weak intensity of the driving electric field. At high values of the electric field, the strong spin-orbit coupling of electrons in the L-valleys significantly reduces the average spin polarization lifetime, but, unexpectedly, for field amplitudes greater than 2.5 kV/cm, the spin lifetime increases with the lattice temperature. Our numerical findings are validated by a good agreement with the available experimental results and with calculations recently obtained by a different theoretical approach.

show abstract

Section: Comparison With Experiments and With Other Theoretical Approsupporting

confidence: 71%

Section: Introductionmentioning

confidence: 99%

Relaxation of electron spin during high-field transport in GaAs bulk

Spezia¹,

Adorno²,

Pizzolato³

et al. 2010

J. Stat. Mech.

View full text Add to dashboard Cite

show abstract

“…Interestingly, one notices that the SOC coefficient of X-valley obtained here is comparable with that of GaAs, 0.059 eV·Å, 19 which is very different from the situation of Γ-valley. For the Γ-valley, the Dresselhaus SOC coefficient in GaN is much smaller than that in GaAs.…”

contrasting

confidence: 60%

Spin–orbit coupling and -factor of -valley in cubic GaN

Shen

2011

Solid State Communications

Self Cite

View full text Add to dashboard Cite

We report our theoretically investigation on the spin-orbit coupling and g-factor of the X-valley in cubic GaN. We find that the spin-orbit coupling coefficient from sp 3 d 5 s * tight-binding model is 0.029 eV·Å, which is comparable with that in cubic GaAs. By employing the k · p theory, we find that the g-factor in this case is only slightly different from the free electron g-factor. These results are expected to be important for the on-going study on spin dynamics far away from equilibrium in cubic GaN.PACS numbers: 71.70. Ej, 61.82.Fk Due to the existence of the wide energy gap between the conduction band and the valence band, GaN has been proposed to be a promising candidate for many electronic applications, such as the solid-state ultraviolet optical sources and high-power electronic devices.

show abstract

“…[120,121] and β L = 0.26 eVÅ · 2/ , as theoretically estimated in Ref. [122]. As the quantum-mechanical description of the electron spin evolution is equivalent to that of a classical momentum S experiencing the magnetic field B, we describe the electron spin dynamics by means of the classical equation of precession motion…”

Section: Electron Spin Decay Modellingmentioning

confidence: 97%