Spin-orbit-coupling effects on shallow acceptor states in quantum dots

Polupanov, Alexander F.; Galiev, V. I.; Novák, Mihály

doi:10.1016/0038-1098(95)80054-9

Cited by 4 publications

(6 citation statements)

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“…The values agreed within an accuracy of 10 −3 or better. Our computed values of the oscillator strengths agreed with the corresponding values calculated with exact analytical acceptor envelopes [20] to at least two digits.…”

Section: Calculation Of the Envelopessupporting

confidence: 80%

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An acceptor in a quantum dot

Janiszewski¹,

Suffczyński²

1999

J. Phys.: Condens. Matter

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Energy levels and oscillator strengths for transitions between the lowest states of an acceptor in a semiconductor quantum dot with a finite potential barrier have been computed in the effective-mass approximation, with the valence-band degeneracy in cubic semiconductors taken into account in the spherical approximation. Variational envelope functions have to satisfy the appropriate boundary conditions to ensure the hermiticity of the Hamiltonian matrix. In typical cubic semiconductors the acceptor optical transition energies and oscillator strengths are found to have enhanced values, larger by one order of magnitude than those in the bulk, in the dots of radius approximating in value to the diameter of the acceptor ground-state envelope.

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Section: Calculation Of the Envelopessupporting

confidence: 80%

“…The index i (=1, 2) labels the two components of the envelope. The components of the radial functions, f 1 (r) and f 2 (r), have to satisfy the set of differential equations [9,11,[18][19][20]…”

Section: The Effective-mass Equation For An Acceptor In a Quantum Dotmentioning

confidence: 99%

An acceptor in a quantum dot

Janiszewski¹,

Suffczyński²

1999

J. Phys.: Condens. Matter

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“…There are many theoretical works which are devoted to the study of shallow donor and acceptor impurity states, in nanosystems of different shapes [7][8][9][10][11][12][13][14][15]. It was proved that by decreasing the QD radius to the value less than the corresponding effective Bohr radius, the probability of electron residence outside QD is larger than in the QD.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the effect of polarization traps and shallow impurities on the interlevel light absorption of quantum dots

Boichuk¹,

Leshko²,

Karpyn³

2017

Condens. Matter Phys.

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A spherical quantum dot (QD) heterosystem CdS/SiO 2 has been studied. Each QD has a hydrogen-like impurity in its center. Besides that, it has been accounted that a polarization trap for electron exists at the interfaces due to the difference between the QD and matrix dielectric permittivity. It has been defined that for small QD radii there are surface electron states. For different radii, partial contributions of the surface states into the electron energy caused by the electron-ion and electron-polarization charges interaction have been defined. The linear light absorption coefficient of noninteracting QDs has been calculated taking into account the QD dispersion by the size. It is shown that the surface states can be observed into different ranges of an electromagnetic spectrum.

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“…Applying the envelope-function approximation to the description of hole states in QDs embedded in a semiconductor matrix, we can find not only the energy spectrum and wave functions of particles, but also examine the optical effects caused by interlevel hole transitions [12,13]. It is known that the optical selection rules, oscillator strength, and interlevel hole absorption coefficient essentially depend on the QD size and shape [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Effect of quantum dot shape of the GaAs/AlAs heterostructure on interlevel hole light absorption

Boichuk¹,

Bilynskyi²,

Sokolnyk³

et al. 2013

Condens. Matter Phys.

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The effect of quantum dot shape on the hole energy spectrum and optical properties caused by the interlevel charge transition based on the 4 × 4 Hamiltonian has been studied for the GaAs quantum dot in the AlAs semiconductor matrix. Calculations have been carried out in perturbation theory taking into account the hybridization of states for cubic, ellipsoidal, cylindrical and tetrahedral shapes by changing the volume of a quantum dot. Based on the energy calculations and on the determined wave functions of the hole states we have defined the selection rules and the dependence of the interlevel hole absorption coefficient on QD shapes and volumes.

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Spin-orbit-coupling effects on shallow acceptor states in quantum dots

Cited by 4 publications

References 0 publications

An acceptor in a quantum dot

An acceptor in a quantum dot

Analysis of the effect of polarization traps and shallow impurities on the interlevel light absorption of quantum dots

Effect of quantum dot shape of the GaAs/AlAs heterostructure on interlevel hole light absorption

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