Spin relaxation from a triplet excited state to a singlet ground state in a semiconductor quantum dot is studied by employing an electrical pump-and-probe method. Spin relaxation occurs via cotunneling when the tunneling rate is relatively large, confirmed by a characteristic square dependence of the relaxation rate on the tunneling rate. When cotunneling is suppressed by reducing the tunneling rate, the intrinsic spin relaxation is dominated by spin-orbit interaction. We discuss a selection rule of the spin-orbit interaction based on the observed double-exponential decay of the triplet state.Electron spin in semiconductors has been a focus of research in the context of spintronics, in which spin is manipulated with spin-orbit coupling [1,2], and of quantum computation, in which spin carries a quantum information [3]. In contrast to two-dimensional electron gas (2DEG) with continuum density of states, electron spin in a quantum dot (QD) is basically free from elastic scattering, and the resulting long-lived spin states are favorable for spin-based applications. Indeed, relaxation times of more than 100 µs have been reported in QDs between Zeeman sublevels [4,5,6], as well as between a spin triplet and a singlet state [7,8]. These relaxation processes have been discussed in terms of either spin-orbit interaction or the cotunneling effect. In this Letter, we study spin relaxation from a triplet state to a singlet state in a lateral QD, in which all the relevant parameters can be controlled with the gate voltages. We observe smooth transition of the relaxation mechanism from the cotunneling regime to the spin-orbit regime by changing tunneling rates. The decay of the excited triplet state follows a single exponential curve in most conditions, but double exponential behavior is observed at a particular magnetic field where the triplet state crosses another state. This might be related to the long-lived spin-entanglement state under strong spin-orbit interaction.Figure 1(a) shows a scanning electron micrograph (SEM) image of our QD device. The AlGaAs/GaAs 2DEG is constricted by combined dry-etching and surface Shottky gates. We use only the three gates on the right-hand side to form a single QD as shown by the white circle. All the measurements are performed in a dilution refrigerator at ∼90 mK with magnetic field, B, applied perpendicularly to the 2DEG.The dot used in this study has charging energy of U ∼ 2 meV and electron number N ∼ 8. When the magnetic field is not very small (B > 0.4 T), electron orbitals in a QD can be classified by Landau level (LL) index, to which they approach in the high field limit [9]. Many-body correction of direct and exchange Coulomb interactions induces spin and orbital transitions associated with different LLs in low magnetic field, but with the same LL in high magnetic field [10]. Figure 1(b) shows an observed DC current, I, through the dot as a func-