‘Spin-on glass’ films for semiconductor technology

Silicate nanosized films prepared by the sol-gel method for use in planar technology for fabricating semiconductor gas sensors

“…The uniform distribution of impurity inorganic compounds is confirmed by transmission electron microscopy [19,21,22,[24][25][26]. Figure 6 displays the image of the 10PtO 2 · 90SiO 2 (wt %) platinum-containing film deposited on the polycrystalline tin dioxide.…”

“…Our investigations revealed that additives of solvents with a high molecular weight prevent undesirable processes of phase separation and crystallization that proceed in a thin layer of sols in the course of their deposition [22,24,40,41]. This is especially important for sols with a high content of modifying additives (more than 20-30 wt % in terms of oxides).…”

“…The influence of the temperature and moisture of the environment has been more poorly investigated. On the other hand, our investigations [22,[24][25][26]41] demonstrate that these factors have a substantial effect on the condition of the film surface. Figure 7 illustrates the evolution of the surface morphology of heavily doped boron-containing films with a variation in the temperature and moisture of surrounding air.…”

“…The kinetics of gelation processes in sols is most frequently investigated using viscosity characteristics. It is common practice to use sols whose dynamic viscosity varies from 1.5 to 3-5 cP [5,[19][20][21][22][24][25][26].…”

“…Their recent applications as catalytic coatings in semiconductor gas sensors hold considerable promise [11,17,19,21,[24][25][26].…”