2023
DOI: 10.1080/23746149.2022.2158757
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Spin injection, relaxation, and manipulation in GaN-based semiconductors

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Cited by 2 publications
(3 citation statements)
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“…[29,[48][49][50][51][52] Distinguishable signatures from one WE have also been reached by reagentless systems. [53][54][55] Although valuable, the one-electrode multiplex methods are prone to two limitations, that is, i) the occurrence of crosstalk between the different tags and ii) the absence of spatial isolation, with the modification of the same WE with different bioreceptors. [26][27][28][29] To date, the crosstalk can be detrimental to the resolution of the current peaks over the voltammetric scan, therefore requiring a meticulous selection of the signaling tags to resolve the electrochemical signatures.…”
Section: Introductionmentioning
confidence: 99%
“…[29,[48][49][50][51][52] Distinguishable signatures from one WE have also been reached by reagentless systems. [53][54][55] Although valuable, the one-electrode multiplex methods are prone to two limitations, that is, i) the occurrence of crosstalk between the different tags and ii) the absence of spatial isolation, with the modification of the same WE with different bioreceptors. [26][27][28][29] To date, the crosstalk can be detrimental to the resolution of the current peaks over the voltammetric scan, therefore requiring a meticulous selection of the signaling tags to resolve the electrochemical signatures.…”
Section: Introductionmentioning
confidence: 99%
“…19,22 In particular, the manipulation of the spin polarization in wurtzite semiconductors is crucial for the development of hightemperature spintronic devices. 32 Despite their promising prospects as emerging topological systems, little work regarding the spin-polarized transport properties has been demonstrated for wurtzite QWs.Spin flip or spin precession in SOC systems is a crucial mechanism to drive spin polarization during electron movement, which has been used for spin field-effect transistors. 33 Based on SOC-induced spin flip, a bias voltage, breaking the…”
mentioning
confidence: 99%
“…19,22 In particular, the manipulation of the spin polarization in wurtzite semiconductors is crucial for the development of hightemperature spintronic devices. 32 Despite their promising prospects as emerging topological systems, little work regarding the spin-polarized transport properties has been demonstrated for wurtzite QWs.…”
mentioning
confidence: 99%