Spin imaging of Poiseuille flow of a viscous electronic fluid

Denisov, K. S.; Baryshnikov, K. A.; Alekseev, P. S.

doi:10.1103/physrevb.106.l081113

Cited by 3 publications

(1 citation statement)

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“…A growing number of both theoretical [16][17][18][19][20] and experimental works [21][22][23][24][25][26] have shown that the hydrodynamic regime of carriers in graphene and similar 2D materials is achievable even around room temperature. Therefore, the mean-field description of the carriers number density n and momentum density p = nm ⋆ v, with m ⋆ the effective mass and v the mean velocity of the carriers, can be written as a set of conservation equations in the form [1,2,16,19,27,28]:…”

Section: Introductionmentioning

confidence: 99%

Feedback enhanced Dyakonov–Shur instability in graphene field-effect transistors

Cosme,

Simões

2024

J. Phys.: Condens. Matter

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Graphene devices are known to have the potential to operate THz signals. In particular,graphene field-effect transistors have been proposed as devices to host plasmonic instabilities in the THz realm; for instance, Dyakonov-Shur instability which relies upondc excitation. %In this work, starting from a hydrodynamical description of the charge carriers, we extend the transmission line description of graphene field-effect transistors to a scheme with a positive feedback loop, also considering the effects of delay, which leads to the transcendental transfer function with terms of the form $e^{a s}\sech^k(s)/s$.Applying the conditions for the excitation of Dyakonov--Shur instability, we report an enhanced voltage gain in the linear regime that is corroborated by our simulations of the nonlinear hydrodynamic model for the charge carriers. This translates to both greater saturation amplitude -- often up to 50\% increase -- and faster growth rate of the self-oscillations. Thus, we bring forth a prospective concept for the realization of a THz oscillator suitable for future plasmonic circuitry.

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