2015
DOI: 10.1063/1.4916665
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Spin Hall switching of the magnetization in Ta/TbFeCo structures with bulk perpendicular anisotropy

Abstract: Spin-orbit torques are studied in Ta/TbFeCo patterned structures with a bulk perpendicular magnetic anisotropy (bulk-PMA) for the first time. The current-induced magnetization switching is investigated in the presence of a perpendicular, longitudinal, or transverse field. In order to rule out Joule heating effect, switching of the magnetization is also demonstrated using current pulses.It is found that the anti-damping torque correlated with spin Hall effect is very strong, and a spinHall angle of about 0.12 i… Show more

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Cited by 97 publications
(74 citation statements)
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“…Recent SOT studies on collinear ferrimagnets were limited to one or two fixed compositions [28,29]. However, in order to evaluate the effect of exchange interaction on SOTs, a comparative study across different ferrimagnetic compositions is required.…”
mentioning
confidence: 99%
“…Recent SOT studies on collinear ferrimagnets were limited to one or two fixed compositions [28,29]. However, in order to evaluate the effect of exchange interaction on SOTs, a comparative study across different ferrimagnetic compositions is required.…”
mentioning
confidence: 99%
“…Since these materials consist of two magnetic sublattices whose magnetic moments possess different orbital character, their dynamics and interactions with spin currents are especially rich. Recently, SOTs in ferrimagnet/heavy-metal bilayer films have been investigated, and the transport mechanisms were discussed [31][32][33]43,44]. Finley and Liu reported a maximum in the dampinglike SOT efficiency at the smallest net magnetization in Ta/Tb x Co 1−x bilayer films grown with * kubond@mit.edu † gbeach@mit.edu a series of different compositions [32] measured at room temperature.…”
mentioning
confidence: 99%
“…Unlike ferromagnetic systems with interfacial PMA, ferrimagnetic films based on rare-earth (RE)-transition-metal (TM) alloys possess strong bulk PMA [31][32][33][34][35][36][37][38][39][40][41][42][43][44] as well as a low net magnetization. Moreover, the net magnetization can be tuned by the composition and temperature [32,[34][35][36]38], making these materials of great interest for examining phenomena such as ultrafast optical switching [35][36][37][38], currentinduced switching [39], and domain wall motion [31,[40][41][42], which rely on maximizing the torque exerted on the net magnetization.…”
mentioning
confidence: 99%
“…Gate-based devices with TIs can be the future for spin manipulation with electric field. These devices can open up gate ways for all spin [14].…”
Section: Resultsmentioning
confidence: 99%
“…Figure 2 shows a typical bilayer structure, taken from Zhao et al [14]. Here, Ta plays the role of spin Hall material.…”
Section: Spin-orbit Coupling Based Materials For Magnetization Switchmentioning
confidence: 99%