Spin gapless semiconductor like Ti<sub>2</sub>MnAl film as a new candidate for spintronics application

Feng, Wuwei; Fu, Xiao Li; Wan, Caihua; Yuan, Zhiyang; Han, X. F.; Quang, Nguyễn Văn; Cho, Sunglae

doi:10.1002/pssr.201510340

Cited by 76 publications

(39 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The activation energy of the carriers was found to be 87 meV, which is on the same order as SGS Mn 2 CoAl 6,30 and Ti 2 MnAl. 31 The anomalous Hall effect (AHE) behavior shown in the inset of Fig. 4 reflects the measured magnetization seen in Fig.…”

mentioning

confidence: 55%

Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy

Jamer

Sterbinsky

Stephen

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure, however, many of these compounds have been found to phase segregate. In this study, ordered Cr 2 CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with SQUID magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity component with an activation energy of 87 meV. These results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.Spin gapless semiconductors (SGS) have been predicted to merge the properties of gapless semiconductors and half-metallic magnets, which would be beneficial in various magnetoelectronic applications.

show abstract

mentioning

confidence: 55%

Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy

Jamer

Sterbinsky

Stephen

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Noted, just before submission of this paper, we realized a compound of this family Ti 2 MnAl which was predicted as nearly FCF-SGS by the first principle calculation done in our group [47], was synthesized by [48] magnetron sputtering system and tested by physics property measurement system. The experimental work confirmed the previously predicted SGS character.…”

Section: Effects Of Uniform Strainmentioning

confidence: 99%

Strain-induced diverse transitions in physical nature in the newly designed inverse Heusler alloy Zr 2 MnAl

Wang

Cheng

Wang

et al. 2016

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…3(a). Owing to its zero net magnetic moment with TN ~ 650 K 93 , this can be viewed as an artificial AFM suitable for room temperature spintronics applications.…”

Section: Half-metallic Topological Semimetal Vs Spin-gapless Semicondmentioning

confidence: 99%

Heusler, Weyl and Berry

Manna¹,

Sun²,

Muechler³

et al. 2018

Nat Rev Mater

293

188

View full text Add to dashboard Cite

Heusler materials, initially discovered by Fritz Heusler more than a century ago, have grown into a family of more than 1000 compounds, synthesized from combinations of more than 40 elements. These materials show a wide range of properties, but new properties are constantly being found. Most recently, by incorporating heavy elements that can give rise to strong spin-orbit coupling (SOC), non-trivial topological phases of matter, such as topological insulators (TIs), have been discovered in Heusler materials. Moreover, the interplay of symmetry, SOC and magnetic structure allows for the realization of a wide variety of topological phases through Berry curvature design. Weyl points and nodal lines can be manipulated by various external perturbations, which results in exotic properties such as the chiral anomaly, and large anomalous spin and topological Hall effects. The combination of a non-collinear magnetic structure and Berry curvature gives rise a non-zero anomalous Hall effect, which was first observed in the antiferromagnets Mn3Sn and Mn3Ge. Besides this k-space Berry curvature, Heusler compounds with non-collinear magnetic structures also possess real-space topological states in the form of magnetic antiskyrmions, which have not yet been observed in other materials. The possibility of directly manipulating the Berry curvature shows the importance of understanding both the electronic and magnetic structures of Heusler compounds. Together, with the new topological viewpoint and the high tunability, novel physical properties and phenomena await discovery in Heusler compounds.

show abstract

Spin gapless semiconductor like Ti₂MnAl film as a new candidate for spintronics application

Cited by 76 publications

References 21 publications

Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy

Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy

Strain-induced diverse transitions in physical nature in the newly designed inverse Heusler alloy Zr 2 MnAl

Heusler, Weyl and Berry

Contact Info

Product

Resources

About

Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application

Cited by 76 publications

References 21 publications

Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy

Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy

Strain-induced diverse transitions in physical nature in the newly designed inverse Heusler alloy Zr 2 MnAl

Heusler, Weyl and Berry

Contact Info

Product

Resources

About

Spin gapless semiconductor like Ti₂MnAl film as a new candidate for spintronics application