Spin dynamics of two-dimensional electrons in a quantum Hall system probed by time-resolved Kerr rotation spectroscopy

Fukuoka, Daisuke; Yamazaki, Tomoyuki; Tanaka, Naoki; Oto, K.; Muro, K.; Hirayama, Y.; Kumada, N.; Yamaguchi, Hiroshi

doi:10.1103/physrevb.78.041304

Cited by 31 publications

(36 citation statements)

References 23 publications

(26 reference statements)

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“…60 Experimental studies can be found in Refs. [642,643]. doped quantum well, the random spin-orbit coupling leads to a spin relaxation rate two orders of magnitude smaller than that due to the averaged one, leading to a spin lifetime of several tens of nanoseconds in GaAs quantum wells [294].…”

Section: Single-particle Theories For Spin Relaxation In (001) Quantumentioning

confidence: 99%

Spin dynamics in semiconductors

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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Section: Single-particle Theories For Spin Relaxation In (001) Quantumentioning

confidence: 99%

Spin dynamics in semiconductors

2010

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“…22(b), T Ã 2 is plotted as a function of B res , exhibiting a maximum T Ã 2 value of 27 ns and an enhancement at several magnetic fields. Such behavior is reminiscent of Shubnikov-de Haas oscillations as a function of B res ; [117][118][119] however, the enhancement does not exactly match the integer filling factors.…”

Section: G Spin Coherence Timementioning

confidence: 99%

Challenges and opportunities of ZnO-related single crystalline heterostructures

Kozuka

Tsukazaki

Kawasaki

2014

Applied Physics Reviews

130

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Recent technological advancement in ZnO heterostructures has expanded the possibility of device functionalities to various kinds of applications. In order to extract novel device functionalities in the heterostructures, one needs to fabricate high quality films and interfaces with minimal impurities, defects, and disorder. With employing molecular-beam epitaxy (MBE) and single crystal ZnO substrates, the density of residual impurities and defects can be drastically reduced and the optical and electrical properties have been dramatically improved for the ZnO films and heterostructures with Mg x Zn 1-x O. Here, we overview such recent technological advancement from various aspects of application. Towards optoelectronic devices such as a light emitter and a photodetector in an ultraviolet region, the development of p-type ZnO and the fabrication of excellent Schottky contact, respectively, have been subjected to intensive studies for years. For the former, the fine tuning of the growth conditions to make Mg x Zn 1-x O as intrinsic as possible has opened the possibilities of making p-type Mg x Zn 1-x O through NH 3 doping method. For the latter, conducting and transparent polymer films spin-coated on Mg x Zn 1-x O was shown to give almost ideal Schottky junctions. The wavelength-selective detection can be realized with varying the Mg content. From the viewpoint of electronic devices, two-dimensional electrons confined at the Mg x Zn 1-x O/ZnO interfaces are promising candidate for quantum devices becauseof high electron mobility and strong electron-electron correlation effect. These wonderful features and tremendous opportunities in ZnO-based heterostructures make this system unique and promising in oxide electronics and will lead to new quantum functionalities in optoelectronic devices and electronic applications with lower energy consumption and high performance.

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“…Given the tiny deviation from the exact value ν = 1, the spin dephasing time decreased by more than an order of magnitude. For reference: the samples investigated in the previous Kerr experiments [11] could not really exhibit collective states as the mobility of the samples µ e ≃ 1×10 6 cm 2 /Vs does not imply the presence of a long-range order QHF. In those works the change of spin relaxation time in transition from the QHF to skyrmion systems demonstrated a tiny change in spin relaxation time from 6 to 4 ns.…”

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confidence: 97%

“…The most comprehensive concept of spin relaxation was developed for the quantum Hall ferromagnet (QHF), ν = 2n + 1 [9][10][11][12][13], in which the n − 1 low Landau levels at T → 0 are fully occupied and the nth level is filled by spin-up electrons aligned along B. The QHF is in fact a high symmetry system for investigating the influence of many-particle Coulomb interactions on the spin excitation spectrum [3][4][5][6][7].…”

mentioning

confidence: 99%

“…And also a comment on the discussion presented in Ref. [11] which is based on theoretical work [9]: in Ref. [9] another initial state was studied and hypothetically a single mechanism was considered for both stochastization and relaxation processes corresponding to the simultaneous S z → S z + 1 and S → S − 1 transitions (see the introductory part above).…”

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Goldstone mode stochastization in a quantum Hall ferromagnet

et al. 2015

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Experimental and theoretical studies of the coherent spin dynamics of two-dimensional GaAs/AlGaAs electron gas were performed. The system in the quantum Hall ferromagnet state exhibits a spin relaxation mechanism that is determined by many-particle Coulomb interactions. In addition to the spin exciton with changes in the spin quantum numbers of δS = δSz = −1, the quantum Hall ferromagnet supports a Goldstone spin exciton that changes the spin quantum numbers to δS = 0 and δSz = −1, which corresponds to a coherent spin rotation of the entire electron system to a certain angle. The Goldstone spin exciton decays through a specific relaxation mechanism that is unlike any other collective spin state. PACS numbers: 73.43. Lp,71.70.Di,75.30.Ds Introduction. Spin relaxation mechanisms in twodimensional (2D) electron systems have not yet been elucidated due to the large number of competing mechanisms and the complex effects of the manyparticle Coulomb interactions on relaxation. 2D confinement and the quantizing magnetic field ensure a cardinal rearrangement of the electron energy spectrum, effectively making it zero-dimensional. Standard single-particle relaxation channels (see, e.g., Ref.[1] and the references therein) are suppressed, which prolongs spin relaxation time. On the other hand, electron-electron correlations, very essential in the case, make the spectrum again two-dimensional. At integer filling factors and at some fractional ones the simplest electron excitations are magnetoexcitons [2] with well defined 2D momenta, specifically representing magnetoplasmons, spin waves, or spin-cyclotron excitons [3][4][5][6][7][8]. New spin relaxation mechanisms, e.g., related to the exciton-exciton scattering processes appear.

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Spin dynamics of two-dimensional electrons in a quantum Hall system probed by time-resolved Kerr rotation spectroscopy

Cited by 31 publications

References 23 publications

Spin dynamics in semiconductors

Spin dynamics in semiconductors

Challenges and opportunities of ZnO-related single crystalline heterostructures

Goldstone mode stochastization in a quantum Hall ferromagnet

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