Spin dynamics and inverse spin Hall effect study in the metallic Pt/NiMn/CoFeB system

Roy, Koustuv; Nayak, Sagarika; Gupta, Pushpendra; Bedanta, Subhankar

doi:10.1039/d2cp01857h

Cited by 5 publications

(2 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The solid lines in Fig. 5(b) are the differentiation of Lorentzian shape function 62,63 where the first and second term of eqn (3) are cumulative differential contributions of symmetric ( S ) and asymmetric ( A S ) transmission signals ( S 21 ), respectively; H res and Δ H are the resonance field and the linewidth field for the respective frequency-dependent signal, respectively.…”

Section: Resultsmentioning

confidence: 99%

Impact of a rubrene buffer layer on the dynamic magnetic behavior of nickel layers on Si(100)

Tanguturi,

Tsai,

et al. 2023

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

Section: Resultsmentioning

confidence: 99%

Impact of a rubrene buffer layer on the dynamic magnetic behavior of nickel layers on Si(100)

Tanguturi,

Tsai,

et al. 2023

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

“…FMR measurements were performed at the 5–17 GHz rf frequency range by putting the sample upside down on a coplanar waveguide. − The ISHE measurements were performed at 7 GHz rf frequency on samples of dimensions 3 mm × 2 mm by connecting a nanovoltmeter at the two opposite edges. − The schematics of the ISHE setup is shown in Figure (a).…”

Section: Methodsmentioning

confidence: 99%

Spin to Charge Conversion in Semiconducting Antiferromagnetic Co₃O₄

Roy

Mishra

Nayak

et al. 2023

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

Power efficient and faster spintronic devices require high spin current propagation efficiency from a ferromagnet (FM) to high spin orbit coupling material. Antiferromagnets (AFM) exhibiting high spin orbit coupling and faster spin dynamics have drawn great attention in such studies. Efficient spin current propagation in metallic AFMs via conduction electron showed promising results in spin to charge conversion physics. Recently, the insulating AFMs are also found to exhibit efficient spin current propagation due to the presence of magnonic modes. The semiconducting AFM Co 3 O 4 is expected to show promising results in spin to charge conversion studies due to the simultaneous presence of magnon modes and conduction electrons. In this context, spin pumping and inverse spin Hall effect studies are carried out on a series of Co 3 O 4 (t nm)/Co(22 nm) samples where the t value varies from 0 to 26 nm. Damping analysis reveals that the spin diffusion length of Co 3 O 4 is 2.5 ± 0.5 nm which is large in comparison to metallic AFMs. The maximum Hall angle of Co 3 O 4 is found to be 0.26. A high spin transparency of 65.8% indicates efficient spin current propagation in the samples.

show abstract

Giant Spin‐Charge Conversion in Ultrathin Films of the MnPtSb Half‐Heusler Compound

Longo,

Markou,

Felser

et al. 2024

Adv Funct Materials

View full text Add to dashboard Cite

Half‐metallic half‐Heusler compounds with strong spin‐orbit‐coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin‐currents, thus enabling the electric manipulation of magnetization in energy‐efficient spintronic devices. In this work, the spin‐to‐charge conversion in the sputtered half‐Heusler MnPtSb within thickness (t) range from 1 to 6 nm is reported. A combination of X‐ray and transmission electron microscopy measurements evidence the epitaxial nature of these ultrathin non‐centrosymmetric layers, with a clear (111)‐orientation on top of (0001) single‐crystal sapphire. By broadband ferromagnetic resonance (FMR), a four orders of magnitude tunable spin accumulation in the MnPtSb‐based heterostructures, within t = 1–6 nm range, is observed. By using spin pumping FMR, a remarkable t‐dependent spin‐charge conversion in the MnPtSb layers is measured, which clearly demonstrates the interfacial origin of the conversion. When interpreted within the inverse Edelstein effect (IEE), the spin‐charge conversion efficiency extracted at room temperature for the thinnest MnPtSb layer reaches λIEE≈3 nm, representing an extremely high conversion. The still never explored ultrathin regime of the MnPtSb films studied in this work and the discovery of their outstanding functionality are two ingredients that demonstrate the potentiality of such materials for future applications in spintronics.

show abstract

Spin dynamics and inverse spin Hall effect study in the metallic Pt/NiMn/CoFeB system

Abstract: Generation and manipulation of pure spin current is the governing tool to develop spintronic devices. Spin pumping and Inverse spin Hall effect (ISHE) are the frontier mechanism to study the...

Cited by 5 publications

References 31 publications

Impact of a rubrene buffer layer on the dynamic magnetic behavior of nickel layers on Si(100)

Impact of a rubrene buffer layer on the dynamic magnetic behavior of nickel layers on Si(100)

Spin to Charge Conversion in Semiconducting Antiferromagnetic Co₃O₄

Giant Spin‐Charge Conversion in Ultrathin Films of the MnPtSb Half‐Heusler Compound

Contact Info

Product

Resources

About

Spin dynamics and inverse spin Hall effect study in the metallic Pt/NiMn/CoFeB system

Abstract: Generation and manipulation of pure spin current is the governing tool to develop spintronic devices. Spin pumping and Inverse spin Hall effect (ISHE) are the frontier mechanism to study the...

Cited by 5 publications

References 31 publications

Impact of a rubrene buffer layer on the dynamic magnetic behavior of nickel layers on Si(100)

Impact of a rubrene buffer layer on the dynamic magnetic behavior of nickel layers on Si(100)

Spin to Charge Conversion in Semiconducting Antiferromagnetic Co3O4

Giant Spin‐Charge Conversion in Ultrathin Films of the MnPtSb Half‐Heusler Compound

Contact Info

Product

Resources

About

Spin to Charge Conversion in Semiconducting Antiferromagnetic Co₃O₄