2021
DOI: 10.1103/physrevapplied.15.044052
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Spin Digitizer for High-Fidelity Readout of a Cavity-Coupled Silicon Triple Quantum Dot

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Cited by 29 publications
(19 citation statements)
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“…Further increasing F I to 99.9% will be possible by adopting faster readout techniques, e.g. with cold baseband [47] or radiofrequency [48,49] amplifiers, or in cavity-based setups [50][51][52][53].…”
Section: Discussionmentioning
confidence: 99%
“…Further increasing F I to 99.9% will be possible by adopting faster readout techniques, e.g. with cold baseband [47] or radiofrequency [48,49] amplifiers, or in cavity-based setups [50][51][52][53].…”
Section: Discussionmentioning
confidence: 99%
“…3 (a) indicates the region within which V M is large enough to shift the SLQD1 Coulomb peak from full signal (on top of the peak) to < 1% signal due to a charging event on the target qubit (the strong response threshold). Any qubit located inside the footprint of this contour would generate full on-off switching of the sensor signal [14], and could be measured without any loss of fidelity due to the distance from the sensor.…”
Section: Single-shot Spin Readoutmentioning
confidence: 99%
“…This frequency-domain method for determining the charge sensitivity in e/ √ Hz is scaled to the charging energy of the sensor (which can vary significantly between devices and different material systems) and hence cannot be directly compared between different experiments. This method also only quantifies the response of the sensor to small charge shifts (much smaller than the Coulomb peak linewidth), and is hence an inappropriate metric for strong-response regime charge sensors (where the sensor signal shifts by an appreciable fraction of a linewidth due to a charging event on a nearby qubit) [5,14,16,17,19]. Because it is scaled to the sensor charging energy, this frequency domain method is also unsuitable for sensors which do not have a periodic response in the gate charge, such as direct dispersive sensors measuring inter-dot transitions.…”
Section: Device Fabricationmentioning
confidence: 99%
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“…The SEB, however, offers the key technological advantage it can detect electronic transitions occurring at rates much lower than the probing rf frequency, a common necessity in the few-electron regime where qubits are operated. However, the performance of SEBs in silicon has remained non-competitive with respect to SETs (99.2% in 100 µs [22]), raising the question of whether fast and compact high-fidelity readout could be possible.…”
mentioning
confidence: 99%