Spin-dependent tunneling junctions with parallel hard bias for read heads

Sin, Kyusik; Gibbons, M.; Funada, S.; Mao, Ming; Rao, D. Bhogeswara; Chien, C.; Tong, Ho‐Ming

doi:10.1063/1.1361051

Cited by 6 publications

(4 citation statements)

References 8 publications

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“…The TMR is important for several technological applications. These encompass magnetic-field sensors [3], hard-disk read heads [4], and non-volatile storage devices [5].…”

Section: Introductionmentioning

confidence: 99%

TMR effect in a FM-QD-FM system

2004

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Using the Keldysh nonequilibrium technique, we study current and the tunnelling magnetoresistance (TMR) in a quantum dot coupled to two ferromagnetic leads (FM-dot-FM). The current is calculated for both parallel and antiparallel lead alignments. Coulomb interaction and spin-flip scattering are taken into account within the quantum dot. Interestingly, we find that these interactions play a contrasting role in the TMR: there is a parameter range where spin flip suppresses the TMR, while Coulomb correlations enhance it, due to Coulomb blockade.

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“…The TMR is important for several technological applications. These encompass magnetic-field sensors [3], hard-disk read heads [4], and non-volatile storage devices [5].…”

Section: Introductionmentioning

confidence: 99%

TMR effect in a FM-QD-FM system

2004

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“…Therefore, to implement the SS structure, the hard magnet for longitudinal bias on the sensor side should be removed. Recently, alternative longitudinal bias schemes have been proposed [6]- [10], namely, in-stack or closed-flux-structure (CFS) longitudinal bias. Applying these structures to the head, the hard magnet can be replaced by a soft magnet.…”

Section: Introductionmentioning

confidence: 99%

Side-Shielded Tunneling Magnetoresistive Read Head for High-Density Recording

et al. 2004

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To reduce the side-reading effect and obtain a narrower effective read track width, the side-shield effect was studied by computer simulations and experiments. Computer simulations show that the side shield, which consists of a soft magnet, can reduce the effective read track width. To examine the effect, a sideshielded tunneling magnetoresistive head was fabricated. In the head, to place a soft magnet by the sensor side, a closed-flux structure was applied for longitudinal bias instead of a conventional abutted junction. Microtrack profile measurements agreed with simulated results, and the side-shield effect was clearly demonstrated.Index Terms-CPP-GMR/TMR, effective track width, longitudinal bias, magnetic heads, side shield.

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“…Hard magnetic alloy films or microstructures are essential components in the design or fabrication of many microelectromechanical systems ͑MEMS͒, 1,2 including magnetic recording devices, 3 permanent 4 and biasing 5 micromagnets, or magnetic microactuators. 6,7 Electrochemical deposition is uniquely suited to the fabrication of such components, due mainly to its ability to closely control the growth process and consequently the material microstructure, 8 and to the possibility to achieve an excellent reproduction of high aspect ratio lithographic structures using throughmask electrodeposition.…”

mentioning

confidence: 99%

Evolution of Surface Roughness in Electrodeposited Co–Ni–P and Co–Ni Films

Kirkwood

Zoldan

Pasa

et al. 2010

J. Electrochem. Soc.

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Dynamic scaling analysis was applied to the investigation of the roughening kinetics of Co–Ni and Co–Ni–P films electrodeposited from acidic (pH 3) chloride solutions. Co–Ni films exhibit uninhibited growth with the formation of well-defined crystal facets, while Co–Ni–P films exhibit a granular microstructure with a much smaller apparent grain size. Correspondingly, the rate at which Co–Ni–P films roughen is much slower than that of the Co–Ni films. This is ascribed to autocatalytic processes during Co–Ni–P deposition occurring in parallel with electrochemical processes, inducing growth inhibition due to the ongoing nucleation, incorporation of phosphorus, and enhanced hydrogen evolution. The slow roughening of Co–Ni–P films is advantageous for microfabrication processes involving the formation of thick magnetic films and microstructures.

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Spin-dependent tunneling junctions with parallel hard bias for read heads

Cited by 6 publications

References 8 publications

TMR effect in a FM-QD-FM system

TMR effect in a FM-QD-FM system

Side-Shielded Tunneling Magnetoresistive Read Head for High-Density Recording

Evolution of Surface Roughness in Electrodeposited Co–Ni–P and Co–Ni Films

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