Spin current, spin accumulation and spin Hall effect

Takahashi, Saburo; Maekawa, Sadamichi

doi:10.1088/1468-6996/9/1/014105

Cited by 172 publications

(146 citation statements)

References 86 publications

(114 reference statements)

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“…As pointed out in Ref. 41, a large spin-current injection from N into F2 is possible in a device with a tunnel junction at the injection part and a metallic contact with a strong spin absorber at the detection part of the nonlocal spin valve structure.…”

Section: Applicationmentioning

confidence: 85%

Spin torques due to diffusive spin current in magnetic texture

et al. 2013

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We present a microscopic theory of spin torque due to diffusive spin currents induced by spin accumulation. The obtained expression is a natural extension of the existing one due to 'local' spin currents associated with ordinary electric currents, and is the reciprocal of the spin motive force which induces charge accumulation as studied recently [J. Shibata and H. Kohno, Phys. Rev. B84, 184408 (2011)]. The result is applied to a domain wall motion in a nonlocal spin injection system, and the torque and force due to diffusive spin current are evaluated.

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Section: Applicationmentioning

confidence: 85%

Spin torques due to diffusive spin current in magnetic texture

et al. 2013

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“…The minority spin polarization in Si results in a splitting of the spin-dependent chemical potential, which is detected as a voltage at a second Fe/Al 2 O 3 contact configured as a nonlocal detector. [27] These results show that either majority or minority spin populations can be generated in the Si simply by changing the polarity of the bias on the Fe/Al 2 O 3 "injector" contact, providing a way to electrically change the injected spin orientation without changing the magnetization of the contact itself. We demonstrate nonlocal spin valve behavior as the magnetization of the injector and detector are switched from parallel to anti-parallel, and precession of the minority spin current generated by spin extraction.…”

Section: Internationalmentioning

confidence: 85%

Information Processing With Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation, and Detection

Erve

Awo-Affouda

Hanbicki

et al. 2009

IEEE Trans. Electron Devices

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Abstract-We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/ Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which flows outside of the charge current path. The spin orientation of this pure spin current is controlled in one of three ways: (a) by switching the magnetization of the Fe contact, (b) by changing the polarity of the bias on the Fe/Al2O3 "injector" contact, which enables the generation of either majority or minority spin populations in the Si, providing a way to electrically manipulate the injected spin orientation without changing the magnetization of the contact itself, and (c) by inducing spin precession through application of a small perpendicular magnetic field. Spin polarization by electrical extraction is as effective as that achieved by the more common electrical spin injection. The output characteristics of a planar silicon three terminal device are very similar to those of nonvolatile giant magnetoresistance metal spin-valve structures.

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“…The presence of a spin-current was found in a great diversity of systems and situations [5,7,9,15,16]. The conditions for its existence is an open problem crucial in the energetics of the system since that current, in contrast to spin-accumulation, entails heat dissipation.…”

Section: Introductionmentioning

confidence: 99%

Conditions for the generation of spin and charge currents in bulk spin Hall devices

Wegrowe¹,

Benda²,

Rubı́³

2017

EPL

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We investigate the out-of-equilibrium stationary states of spin-Hall devices on the basis of the least dissipation principle. We show that, for a bulk paramagnet with spin-orbit interaction, in the case of the Hall bar geometry the principle of minimum dissipated power prevents the generation of transverse spin and charge currents while in the case of the Corbino disk geometry, transverse currents can be produced. More generally, we show that electric charge accumulation prevents the stationary spin to charge current conversion.

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Spin current, spin accumulation and spin Hall effect

Cited by 172 publications

References 86 publications

Spin torques due to diffusive spin current in magnetic texture

Spin torques due to diffusive spin current in magnetic texture

Information Processing With Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation, and Detection

Conditions for the generation of spin and charge currents in bulk spin Hall devices

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