Spin coherence of holes and electrons in undoped CdTe/(Cd,Mg)Te quantum wells

Zhukov, E. A.; Yakovlev, D. R.; Gerbracht, Michael; Mikhailov, G. V.; Karczewski, G.; Wójtowicz, T.; Kossut, J.; Bayer, М.

doi:10.1103/physrevb.79.155318

Cited by 21 publications

(29 citation statements)

References 23 publications

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“…36 A similar dependence was also found in other two-dimensional structures at low temperature [529][530][531], two-dimensional hole systems [400,531] and in ZnSe epilayers close to the GaAs/ZnSe interface [532]. In the localized regime, the electron (hole) spin lifetime in two-dimensional system is very long.…”

Section: Carrier Spin Relaxation At Low Temperature In the Insulatingsupporting

confidence: 67%

“…In the localized regime, the electron (hole) spin lifetime in two-dimensional system is very long. Usually electron spin lifetime is of the order of nanoseconds to microseconds [445,531,533,534], whereas the hole spin lifetime can reach nanoseconds [445,446]. As the temperature increases, the spin lifetime decreases due to delocalization and enhancement of the D'yakonov-Perel' spin relaxation, which increases with electron kinetic energy [400,445,525,535,536].…”

Section: Carrier Spin Relaxation At Low Temperature In the Insulatingmentioning

confidence: 98%

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Spin dynamics in semiconductors

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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Section: Carrier Spin Relaxation At Low Temperature In the Insulatingsupporting

confidence: 67%

Section: Carrier Spin Relaxation At Low Temperature In the Insulatingmentioning

confidence: 98%

Spin dynamics in semiconductors

2010

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“…32,38 Pump-probe Kerr or Faraday rotation techniques give direct access to the properties of the resident carriers, also providing their g factor values and spin dephasing times. 34 Even the coexistence of resident electrons and holes, localized in different sites of the same QW, can be identified by these techniques.…”

Section: Identification Of Trions and Resident Carriersmentioning

confidence: 99%

“…34 Even the coexistence of resident electrons and holes, localized in different sites of the same QW, can be identified by these techniques. 32 Magneto-optical PL and reflectivity studies provide rich information about neutral and charged excitons, including Coulomb binding energies, diamagnetic shifts, Zeeman splittings, and polarization properties. Altogether this allows a precise identification of the different types of trions within the different regimes, as will be shown in the following section.…”

Section: Identification Of Trions and Resident Carriersmentioning

confidence: 99%

Positively versus negatively charged excitons: A high magnetic field study of CdTe/Cd1−xMgxTe quantum wells

et al. 2011

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A magneto-optical study of the energy and spin structure of charged excitons in a 20-nm-thick CdTe/Cd 0.65 Mg 0.35 Te quantum well is performed in strong magnetic fields up to 51 T. The type of resident carriers (holes or electrons) in the quantum well is controlled optically by above-barrier illumination, permitting a direct comparison of positively (T + ) versus negatively (T − ) charged excitons. The binding energies of the singlet states of these complexes behave qualitatively differently with increasing magnetic field B; namely, the binding energy decreases for T + and increases for T − with B. The triplet state of T + is identified in strong fields with a binding energy smaller than that of the T − triplet state.

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“…A schematic of the general RESP dynamics on the basis of prior studies [16,20] is depicted in Fig. 2.…”

Section: A General Spin Dynamics and Initial Phase Shift Of Respmentioning

confidence: 99%

Negative initial phase shift of Kerr rotation generated from the building-up process of resident electron spin polarization in a CdTe single quantum well

et al. 2014

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Initial phase shift in a precessional motion of resident electron-spin polarization is studied in a CdTe/Cd 0.85 Mg 0.15 Te single quantum well using a time-resolved Kerr rotation technique. The generation dynamics of resident electron-spin polarization involve the formation and transformation of the associated optically excited states and are complicated particularly in the early time region. A careful analysis of the phase shift gives a deep understanding of the generation processes. In the experiments, the negative phase shift of the resident electron-spin polarization is observed, and the mechanism associated especially with a quick hole spin flip in negative trions is studied through the dependences on excitation power and magnetic field strength.

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Spin coherence of holes and electrons in undoped CdTe/(Cd,Mg)Te quantum wells

Cited by 21 publications

References 23 publications

Spin dynamics in semiconductors

Spin dynamics in semiconductors

Positively versus negatively charged excitons: A high magnetic field study of CdTe/Cd1−xMgxTe quantum wells

Negative initial phase shift of Kerr rotation generated from the building-up process of resident electron spin polarization in a CdTe single quantum well

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