Spin‐Coating: In Situ Studies of Phase Separation and Crystallization Directed by Marangoni Instabilities During Spin‐Coating (Adv. Mater. 48/2013)

Toolan, Daniel T. W.; Pullan, Nikki; Harvey, Michael; Topham, Paul D.; Howse, Jonathan R.

doi:10.1002/adma.201370299

Cited by 2 publications

(2 citation statements)

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“…[5][6][7] Compared with vacuum deposition technology, solution processes, such as spin coating and inkjet printing, are more attractive for mass production. [8][9][10][11][12] Therefore, solution-processable emitters with high efficiency are indispensable for solution-processed OLEDs. However, most reported emitters suffer from concentration quenching, exciton annihilation, and inefficient host-guest energy transfer.…”

Section: Introductionmentioning

confidence: 99%

“…The urgent demand of cost‐effective OLEDs results in the booming innovation of material design and device enginering [5–7] . Compared with vacuum deposition technology, solution processes, such as spin coating and inkjet printing, are more attractive for mass production [8–12] . Therefore, solution‐processable emitters with high efficiency are indispensable for solution‐processed OLEDs.…”

Section: Introductionmentioning

confidence: 99%

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Tetracoordinate Boron‐Based Multifunctional Chiral Thermally Activated Delayed Fluorescence Emitters

Zhou

et al. 2022

Angewandte Chemie

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Purely organic emitters have shown great potential but still suffer from low efficiency in nearinfrared organic light-emitting diodes (NIR-OLEDs) due to the intensive non-radiative recombination. In this contribution, two pairs of thermally activated delayed fluorescence (TADF) enantiomers (R/S-DOBP and R/S-HDOBP) with tetracoordinate boron geometries were designed and synthesized. The TADF emitters simultaneously showed aggregation-induced emission, circularly polarized luminescence, high-contrast mechanochromism, and piezochromism behaviors. More importantly, R/S-DOBP and R/S-HDOBP revealed high photoluminescence quantum yields and efficient reverse intersystem crossing in neat films. The nondoped solutionprocessed OLEDs based on these unique emitters revealed the NIR emission (peaking at 716 nm) with a maximum external quantum efficiency of 1.9 % and high exciton utilization efficiency of 86 %, which represent one of the best solution-processed nondoped NIR-OLEDs.

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