Spin-coated Al-doped ZnO thin films for optical applications: Structural, micro-structural, optical and luminescence studies

Srinatha, N.; Raghu, P.; Mahesh, H.M.; Angadi, Basavaraj

doi:10.1016/j.jallcom.2017.06.182

Cited by 72 publications

(29 citation statements)

References 25 publications

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“…The crystallite size of impurity-doped ZnO thin films varies because of differences in the ionic radii of the dopants and Zn; tetrahedral coordination leads to changes in the distance between both Zn-O and M-O (M: doping element) [ 7 , 19 ]. The incorporation of the impurities into ZnO crystals not only caused lattice distortion and non-uniform stress distribution, but also tended to create dopant-induced nucleation centers and lattice defects [ 10 ].…”

Section: Resultsmentioning

confidence: 99%

“…Zinc oxide (ZnO) is an important n-type II-VI group semiconductor with a wide direct bandgap of 3.37 eV, as well as a high exciton binding energy of 60 meV at room temperature (RT). It is also thermally and chemically stable and has high radiation hardness, which extend its use in harsh environments [ 6 , 7 ]. Because of its wide bandgap and high exciton energy, ZnO is a suitable semiconductor material for the sensing layer in photodetectors, providing great sensitivity for UV radiation without extra filters, and ensuring effective excitonic emission at RT [ 1 , 3 ].…”

Section: Introductionmentioning

confidence: 99%

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Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films

Tsay

Hsu

2017

Materials

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ZnO, Al-doped ZnO (AZO), and Ga-doped ZnO (GZO) semiconductor thin films were deposited on glass substrates via a sol-gel spin-coating process for application in a photoconductive ultraviolet (UV) detector. The doping concentrations of Al and Ga were 1.0 at % in the precursor solutions. In this study, the microstructural features and the optical and electrical properties of sol-gel-derived ZnO, AZO, and GZO thin films were compared, and the performance of ZnO-based UV photodetectors under ultraviolet A (UVA) light were measured. Experimental results confirmed the synthesis of single-phase nanocrystalline ZnO-based thin films and the successful substitution of Al and Ga into Zn sites in ZnO crystals. The results also demonstrated that the optical transmittance and electrical properties of ZnO thin films could be improved by Al and Ga doping. UV photodetectors based on ZnO-based thin films, having a metal-semiconductor-metal (MSM) configuration, were fabricated with Al inter-digitated electrodes. All photodetectors showed an ohmic nature between semiconductor and electrode contacts and exhibited a sharp increase in photocurrent under illumination with UVA light. We found that the MSM UV photodetector based on the GZO semiconductor thin film exhibited the best UV response (IUVA/Idark) of 73.3 and the highest photocurrent responsivity of 46.2 A/W under UVA light (power density ~0.825 mW/cm2) at 5 V bias.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films

Tsay

Hsu

2017

Materials

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“…Among II–VI semiconductors, zinc oxide (ZnO) has been continuously studied in recent decades due to its wide bandgap (3.27 eV) and large exciton binding energy of 60 meV, as it fulfills several active component(s) properties in sensors, solar cells, spintronics and light emitting diodes (LEDs) . Moreover, ZnO is available in large scale, chemically stable and eco‐friendly.…”

Section: Figurementioning

confidence: 99%

“…Among II-VI semiconductors, zinc oxide (ZnO) has been continuously studied in recent decades due to its wide bandgap (3.27 eV) and large exciton binding energy of 60 meV, as it fulfills several active component(s) properties in sensors, solar cells, spintronics and light emitting diodes (LEDs). [1] Moreover, ZnO is available in large scale, chemically stable and eco-friendly. At room temperature, the ZnO PL spectrum typically exhibits one emission peak in the ultraviolet (UV) region due to free exciton recombination and a low intensity broad emission in the visible range, associated to point defect states transitions, such as vacancies (V o and V Zn ), interstitials (O i and Zn i ) and antisites (O Zn and Zn O ).…”

mentioning

confidence: 99%

White Electroluminescence from Aluminum Zinc Oxide Embedded in Poly(9‐vinylcarbazole)

et al. 2019

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Simple methods for manufacturing white light‐emitting diodes (WLEDs) based on ZnO are still challenging researchers. Solution processed WLEDs based on Al doped ZnO (AZO) nanoparticles embedded in PVK (hybrid system) are demonstrated here, and PL studies of the hybrid system suggest that defects in AZO and PVK/AZO interface are likely to be the origin of white EL. Besides electrical conductivity increment, AZO provided the emissive layer with a more balanced charge injection; thus, the threshold voltage reduced from 8.1 V to 7.5 V and EL enhanced from 4.47 cd/m2 to 18.69 cd/m2 at 10 V, for the pure PVK compared to the hybrid system, respectively.

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“…Various doped ZnO nanomaterials have been recently synthesized and explored for their photocatalytic [ 10 , 11 , 12 ], gas sensing [ 13 , 14 ], photonic crystals [ 15 ], spintronics [ 16 ], electrochemical sensing [ 17 , 18 , 19 ], optoelectronics [ 20 , 21 ], dye-sensitized solar cells [ 22 ], light emitting diodes [ 23 ], field emission transistors [ 24 , 25 ], and many more applications. Methods like sol-gel [ 24 , 26 ], hydrothermal [ 18 , 27 ], ceramics vapor deposition [ 28 ], spin coating [ 29 ], solution combustion [ 30 ], RF sputtering [ 31 ], pulse laser deposition [ 32 , 33 ], etc. are reported for the synthesis of doped ZnO nanostructures.…”

Section: Introductionmentioning

confidence: 99%

In-Doped ZnO Hexagonal Stepped Nanorods and Nanodisks as Potential Scaffold for Highly-Sensitive Phenyl Hydrazine Chemical Sensors

Umar

Kim

Kumar³

et al. 2017

Materials

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Herein, we report the growth of In-doped ZnO (IZO) nanomaterials, i.e., stepped hexagonal nanorods and nanodisks by the thermal evaporation process using metallic zinc and indium powders in the presence of oxygen. The as-grown IZO nanomaterials were investigated by several techniques in order to examine their morphological, structural, compositional and optical properties. The detailed investigations confirmed that the grown nanomaterials, i.e., nanorods and nanodisks possess well-crystallinity with wurtzite hexagonal phase and grown in high density. The room-temperature PL spectra exhibited a suppressed UV emissions with strong green emissions for both In-doped ZnO nanomaterials, i.e., nanorods and nanodisks. From an application point of view, the grown IZO nanomaterials were used as a potential scaffold to fabricate sensitive phenyl hydrazine chemical sensors based on the I–V technique. The observed sensitivities of the fabricated sensors based on IZO nanorods and nanodisks were 70.43 μA·mM−1·cm−2 and 130.18 μA·mM−1·cm−2, respectively. For both the fabricated sensors, the experimental detection limit was 0.5 μM, while the linear range was 0.5 μM–5.0 mM. The observed results revealed that the simply grown IZO nanomaterials could efficiently be used to fabricate highly sensitive chemical sensors.

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Spin-coated Al-doped ZnO thin films for optical applications: Structural, micro-structural, optical and luminescence studies

Cited by 72 publications

References 25 publications

Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films

Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films

White Electroluminescence from Aluminum Zinc Oxide Embedded in Poly(9‐vinylcarbazole)

In-Doped ZnO Hexagonal Stepped Nanorods and Nanodisks as Potential Scaffold for Highly-Sensitive Phenyl Hydrazine Chemical Sensors

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