1999
DOI: 10.1103/physrevb.59.93
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Spin accumulation in small ferromagnetic double-barrier junctions

Abstract: The nonequilibrium spin accumulation in ferromagnetic double barrier junctions is shown to govern the transport in small structures. Transport properties of such systems are described by a generalization of the theory of the Coulomb blockade. The spin accumulation enhances the magnetoresistance. The transient nonlinear transport properties are predicted to provide a unique experimental evidence of the spin accumulation in the form of a reversed current on time scales of the order of the spin-flip relaxation ti… Show more

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Cited by 126 publications
(121 citation statements)
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References 16 publications
(17 reference statements)
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“…This leads to a number of interesting new phenomena [160], such as a tunneling magnetoconductance (the conductance of the SET depends on the relative orientation of the magnetic moments of leads and island) or Coulomb oscillations as a function of the applied magnetic field (which can shift the chemical potential of the island, analogous to the effect of V g , if spin-up and spin-down electrons have different density of states near ε F ). Such effects had previously been studied in micron-size ferromagnetic islands [160][161][162][163][164][165][166][167][168][169], and also in nm-scale cobalt grains [170,171] at or above helium temperatures.…”
Section: Ferromagnetic Grainsmentioning
confidence: 99%
“…This leads to a number of interesting new phenomena [160], such as a tunneling magnetoconductance (the conductance of the SET depends on the relative orientation of the magnetic moments of leads and island) or Coulomb oscillations as a function of the applied magnetic field (which can shift the chemical potential of the island, analogous to the effect of V g , if spin-up and spin-down electrons have different density of states near ε F ). Such effects had previously been studied in micron-size ferromagnetic islands [160][161][162][163][164][165][166][167][168][169], and also in nm-scale cobalt grains [170,171] at or above helium temperatures.…”
Section: Ferromagnetic Grainsmentioning
confidence: 99%
“…Recently, another three-terminal spin electronics device was realized; a ferromagnetic single-electron transistor [6]. In this case the current depends on the relative orientation of the magnetization of the source, the island and the drain, and of the electrostatic potential of the island tuned by a gate voltage [7].These examples illustrate that devices with ferromagnetic order deserve a thorough theoretical investigation. Inspired by the circuit theory of Andreev reflection [8], we present a finite-element theory for transport in hybrid ferromagnetic-normal metal systems based on the conservation of charge and spin current.…”
mentioning
confidence: 99%
“…This behaviour can originate from the spin dependence of the quantized energy states in the middle electrode 27 . It has been predicted that such discrete states can shift as a function of the magnetic misalignment of the two ferromagnetic electrodes 28,29,30 . Our interpretation of the observed behaviour is as follows.…”
mentioning
confidence: 99%