Spice model for detection of dynamic threshold voltage shift during failure analysis of oxide TFT‐based AMD gate drivers

Lee, Wonseok; Mativenga, Mallory; Kang, Jong-Suk; Tak, Nam-Kyun; Choi, In-Chol; Kim, Jin‐Young; Han, Ji-Ung; Choi, Jin Sik; Hwang, Man-Gyu

doi:10.1002/jsid.615

Cited by 2 publications

(2 citation statements)

References 18 publications

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“…The electrical parameters extracted from the representative device were as follows: A V TH of 1.8 V; a μ FE of 7.3 cm 2 /Vs; and a subthreshold swing of 0.32 V/dec. Here, V TH was defined as the value of gate-to-source voltage ( V GS ) inducing the drain current ( I D ) of a width/length ( W / L ) × 10 nA at a drain-to-source voltage ( V DS ) of 5 V [23,24]. The mechanical stress was applied to the TFTs by using the customized bending plate with a ~20 mm bending radius (Figure 1d).…”

Section: Methodsmentioning

confidence: 99%

Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors

Seo

Jeong

et al. 2019

Materials

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We investigated the effect of simultaneous mechanical and electrical stress on the electrical characteristics of flexible indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs). The IGZO TFTs exhibited a threshold voltage shift (∆VTH) under an application of positive-bias-stress (PBS), with a turnaround behavior from the positive ∆VTH to the negative ∆VTH with an increase in the PBS application time, whether a mechanical stress is applied or not. However, the magnitudes of PBS-induced ∆VTH in both the positive and negative directions exhibited significantly larger values when a flexible IGZO TFT was under mechanical-bending stress than when it was at the flat state. The observed phenomena were possibly attributed to the mechanical stress-induced interface trap generation and the enhanced hydrogen diffusion from atomic layer deposition-grown Al2O3 to IGZO under mechanical-bending stress during PBS. The subgap density of states was extracted before and after an application of PBS under both mechanical stress conditions. The obtained results in this study provided potent evidence supporting the mechanism suggested to explain the PBS-induced larger ∆VTHs in both directions under mechanical-bending stress.

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Section: Methodsmentioning

confidence: 99%

Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors

Seo

Jeong

et al. 2019

Materials

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“…In recent years, the direct fabrication of shift register (SR) circuits using TFT-integrated technology instead of the traditional driver ICs has attracted much attention from researchers worldwide [ 15 , 16 , 17 , 18 ]. For example, the researchers from Kyung Hee University have developed a simple SR circuit with a long lifetime.…”

Section: Introductionmentioning

confidence: 99%

High-Speed Shift Register with Dual-Gated Thin-Film Transistors for a 31-Inch 4K AMOLED Display

Rong

Lin

et al. 2022

Micromachines

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In this work, a promising dual-gated thin film transistor (TFT) structure has been proposed and introduced in the shift register (SR)-integrated circuits to reduce the rising time. The threshold voltage can be simultaneously changed by the top gate and the bottom gate in the proposed dual-gated TFTs. When the SR circuits start to export the scan signals in the displays, the driving currents in the SR circuits are increased by switching the working station of driving TFTs from the enhancement characterization to the depletion characterization. Subsequently, the detailed smart spice simulation has been used to study the function of the proposed SR circuits. In the next step, the proposed SR circuits have been fabricated in a G4.5 active-matrix organic light-emitting diode manufacture factory. The simulated and experimental results indicate that the shift register pulses with the full swing amplitude can be obtained in the SR circuits. Moreover, in contrast to the conventional SR circuits employing with the single-gated TFTs, it has been found that the rising time of the output signals can be reduced from 3.75 μs to 1.23 μs in the proposed SR circuits with the dual-gated TFTs, thus exhibiting the significant improvement of the driving force in the proposed SR circuits. Finally, we demonstrated a 31-inch 4K AMOLED display with the proposed SR circuits.

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Spice model for detection of dynamic threshold voltage shift during failure analysis of oxide TFT‐based AMD gate drivers

Cited by 2 publications

References 18 publications

Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors

Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors

High-Speed Shift Register with Dual-Gated Thin-Film Transistors for a 31-Inch 4K AMOLED Display

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