Spectroscopy of titanium-doped gallium lanthanum sulfide glass

Hughes, Mark A.; Curry, Richard J.; Hewak, Daniel W.

doi:10.1364/josab.25.001458

Cited by 8 publications

(6 citation statements)

References 34 publications

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“…For example, the first observation of the 4.9 µm fluorescence from the 5 I 4 → 5 I 5 transition of Ho 3+ was in a GLS host [18]. Unusual emission from V 3+ has also been observed in GLS [19], as well as rarely observed Ti 3+ emission in a glass host [20]. In this work we report the absorption, excitation, emission (from excitation wavelengths of 480-1300 nm), quantum efficiency (QE), lifetime and cryogenic spectral measurements of Bi doped GLS…”

Section: Introductionmentioning

confidence: 99%

Ultrabroad emission from a bismuth doped chalcogenide glass

et al. 2009

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Abstract:We report emission from a bismuth doped chalcogenide glass which is flattened, has a full width at half maximum (FWHM) of 600 nm, peaks at 1300 nm and covers the entire telecommunications window. At cryogenic temperatures the FWHM reaches 850 nm. The quantum efficiency and lifetime were as high as 32% and 175 µs, respectively. We also report two new bismuth emission bands at 2000 and 2600 nm. Absorption bands at 680, 850, 1020 and 1180 nm were observed. The 1180 nm absorption band was previously unobserved. We suggest that the origin of the emission in Bi:GLS is Bi 45-50 (1996). 36. J. Ren, J. Qiu, D. Chen, C. Wang, X. Jiang, and C. Zhu, "Infrared luminescence properties of bismuth-doped barium silicate glasses,"

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Section: Introductionmentioning

confidence: 99%

Ultrabroad emission from a bismuth doped chalcogenide glass

et al. 2009

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“…We therefore propose that the three spin allowed absorption bands identified in Figs. 1 and 2 at 1100, 737 and 578 nm are due to 4 A 2 ( 4 F)> 4 T 2 ( 4 F), 4 A 2 ( 4 F)> 4 T 1 ( 4 F) and 4 A 2 ( 4 F)> 4 T 1 ( 4 P) transitions respectively and the spin forbidden transition at 1000 nm is attributed to the 4 A 2 ( 4 F)> 2 E( 2 G) or 4 A 2 ( 4 F)> 2 T 2 ( 2 G) transition. The emission peaking at 1500 nm is due to the 4 T 2 ( 4 F) > 4 A 2 ( 4 F) transition.…”

Section: Octahedral D 3 Configurationmentioning

confidence: 93%

“…These properties allowed the observation of low-energy transitions which are not seen in other hosts, for example the first observation of the 4.9 ?m fluorescence from the 5 I 4 > 5 I 5 transition of Ho 3+ [3]. Also, rarely observed Ti 3+ emission [4] and long-wavelength emission from Bi [5] have both also been reported from GLS host glasses. …”

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confidence: 92%

Determination of the oxidation state and coordination of a vanadium doped chalcogenide glass

Hughes¹,

Curry²,

Hewak³

2011

Optical Materials

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Vanadium doped chalcogenide glass has potential as an active gain medium, particularly at telecommunications wavelengths. This dopant has three spin allowed absorption transitions at 1100, 737 and 578 nm, and a spin forbidden absorption transition at 1000 nm. X-ray photo electron spectroscopy indicated the presence of vanadium in a range of oxidation states from V + to V 5+ . Excitation of each absorption band resulted in the same characteristic emission spectrum and lifetime, indicating that only one oxidation state is optically active. Arguments based on TanabeSugano analysis indicated that the configuration of the optically active vanadium ion was octahedral V 2+ . The calculated crystal field parameters (Dq/B, B and C/B) were 1.85, 485.1 and 4.55, respectively. IntroductionDetermination of the oxidative state of an active ion dopant is important for optical device applications as it determines the energy levels within the material available for use. Knowledge of the oxidation state is therefore needed when modelling the radiative and non-radiative transitions that occur in an optical material. The oxidation states of transition metal ions are particularly difficult to identify by spectroscopy as their bonding d electrons also determine their electronic energy levels and they are therefore strongly dependent on both the strength and the arrangement (coordination) of the neighbouring atoms electric field. In contrast, rare-earth metals, in which the electronic energy levels are determined by the 4f electrons which do not take part in bonding and are shielded by the 5s5p electrons, the oxidation state can be identified relatively easily by spectroscopy. Amorphous glass hosts, with their tendency to result in mixed oxidation states due to significant variation in the local environment, lead to a complex superposition of electronic states when doped, which exacerbates the problem of spectroscopic analysis of transition metals.Chalcogenide glasses often exhibit low phonon energy and this allows the observation of optical transitions in dopants that are not observed in traditional glasses such as silica. Gallium lanthanum sulphide (GLS) has a transmission window of ~0.5-10 ?m [1], a high refractive index of ~2.4, and a low maximum phonon energy of ~425 cm -1 which results in low non-radiative decay rates [2]. These properties allowed the observation of low-energy transitions which are not seen in other hosts, for example the first observation of the 4.9 ?m fluorescence from the 5 I 4 > 5 I 5 transition of Ho 3+ [3]. Also, rarely observed Ti 3+ emission [4] and long-wavelength emission from Bi [5] have both also been reported from GLS host glasses.

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“…A number of analyses have been undertaken in order to investigate this lack of performance, but underlying issues such as unwanted impurities and the strongly covalent nature of the chalcogen glass bonds play a fundamental role. Transition metal cations doped into such glasses 9 have exhibited long wave fluorescence, yet there has been no demonstration of d-block transition metal lasers. This can be attributed to the fact that TM ions have large emission probabilities compared with RE ions so that the energy level lifetimes are short.…”

Section: Introductionmentioning

confidence: 99%

Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

Sazio

Sparks

et al. 2015

SPIE Proceedings

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ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 -5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode corecladding waveguiding.

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Spectroscopy of titanium-doped gallium lanthanum sulfide glass

Cited by 8 publications

References 34 publications

Ultrabroad emission from a bismuth doped chalcogenide glass

Ultrabroad emission from a bismuth doped chalcogenide glass

Determination of the oxidation state and coordination of a vanadium doped chalcogenide glass

Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

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