Aluminum oxide ($${\text {AlO}}_x$$
AlO
x
)-based single-electron transistors (SETs) fabricated in ultra-high vacuum (UHV) chambers using in situ plasma oxidation show excellent stabilities over more than a week, enabling applications as tunnel barriers, capacitor dielectrics or gate insulators in close proximity to qubit devices. Historically, $${\text {AlO}}_x$$
AlO
x
-based SETs exhibit time instabilities due to charge defect rearrangements and defects in $${\text {AlO}}_x$$
AlO
x
often dominate the loss mechanisms in superconducting quantum computation. To characterize the charge offset stability of our $${\text {AlO}}_x$$
AlO
x
-based devices, we fabricate SETs with sub-1 e charge sensitivity and utilize charge offset drift measurements (measuring voltage shifts in the SET control curve). The charge offset drift ($$\Delta {Q_0}$$
Δ
Q
0
) measured from the plasma oxidized $${\text {AlO}}_x$$
AlO
x
SETs in this work is remarkably reduced (best $$\Delta {Q_0}=0.13 \, \hbox {e} \, \pm \, 0.01 \, \hbox {e}$$
Δ
Q
0
=
0.13
e
±
0.01
e
over $$\approx 7.6$$
≈
7.6
days and no observation of $$\Delta {Q_0}$$
Δ
Q
0
exceeding $$1\, \hbox {e}$$
1
e
), compared to the results of conventionally fabricated $${\text {AlO}}_x$$
AlO
x
tunnel barriers in previous studies (best $$\Delta {Q_0}=0.43 \, \hbox {e} \, \pm \, 0.007 \, \hbox {e}$$
Δ
Q
0
=
0.43
e
±
0.007
e
over $$\approx 9$$
≈
9
days and most $$\Delta {Q_0}\ge 1\, \hbox {e}$$
Δ
Q
0
≥
1
e
within one day). We attribute this improvement primarily to using plasma oxidation, which forms the tunnel barrier with fewer two-level system (TLS) defects, and secondarily to fabricating the devices entirely within a UHV system.