Monolayer (1L) transition metal dichalcogenides (TMDCs) are attractive materials for several optoelectronic applications because of their strong excitonic resonances and valley-selective response. Valley excitons in 1L-TMDCs are formed at opposite points of the Brillouin zone boundary, giving rise to a valley degree of freedom that can be treated as a pseudospin and may be used as a platform for information transport and processing. However, short valley depolarization times and relatively short exciton lifetimes at room temperature prevent using valley pseudospin in on-chip integrated valley devices. Recently it has been demonstrated how coupling these materials to optical nanoantennas and metasurfaces can overcome this obstacle. Here, we review the state-of-theart advances in valley-selective directional emission and exciton sorting in 1L-TMDC mediated by nanostructures and nanoantennas. We briefly discuss the optical properties of 1L-TMDCs paying special attention to their photoluminescence/absorption spectra, dynamics of valley depolarization and valley Hall effect. Then, we review recent works on nanostructures for valley-selective directional emission from 1L-TMDCs.(TMDCs) [1][2][3][4][5][6][7][8][9][10]. Monolayer TMDCs are formed ( Figure 1a) by a hexagonal network of transition metal atoms (M: Mo, W) hosted between two hexagonal lattices of chalcogenide atoms (X: S, Se).Electronically, 1L-TMDCs behave as two-dimensional semiconductors, with bandgaps lying in the visible and near-IR range. In the monolayer limit, the bandgaps of these materials are direct, enabling enhanced interactions of dipole transitions with light. An essential property of 1L-TMDCs is the broken inversion symmetry of their hexagonal 2D crystals, which, in combination with time-reversal symmetry, leads to opposite spins at the +K and -K valleys, effectively locking the spin and valley degrees of freedom (pseudospin or Berry curvature) [11][12][13]. Optical manipulation of the valley degree of freedom can be realized via exciton resonances based on the valley contrasting optical selection rules (for instance with σ and σ light excitation). The unique opportunity of addressing valley index make it possible to explore this binary quantum degree of freedom as an alternative information carrier [7,14,15], which may complement both classical and quantum computing schemes based on charge and spin. However, short valley depolarization times and relatively short exciton lifetimes at room temperature prevent using valley pseudospin in on-chip integrated valley devices. Recently it has been demonstrated how coupling these materials to optical nanoantennas and metasurfaces can overcome this obstacle. It has been demonstrated that resonant optical nanostructures and nanoantennas can effectively enhance and direct the emission from opposite valleys in 1L-TMDCs into different directions [16-19]. The proposed nanostructures for valley-selective directional emission can be divided into two groups: nanostructures for spatial separation of valley de...