Spectroscopic Study of Rare Earth Doped Nano-Crystalline Silicon in Sio₂Films

Abstract

Si-rich SiO 2 , Nd-doped Si-rich SiO 2 and Nd-doped SiO 2 thin films were prepared. Photoluminescence (PL) spectra for visible and infrared were obtained for each as-deposited film. The samples were annealed by steps to different temperatures within the range 600°C-1100°C for 30 minutes at each annealing temperature. PL spectra were obtained at each step and their characteristics were studied. The best annealing temperature for the PL of the rare earth (RE) ions was obtained. The PL spectra of the films were compared with one another. Energy transfer from the silicon nanocrystals (Si nc) to the RE ions is verified using excitation wavelength and excitation power spectra.

Luminescence of Rare Earth Doped Si/Al/SiO2 Co-Sputtered Films

“…The values in parentheses after the peak values correspond to shoulders and are succeeded by the letters "sh". The thickness of Nd-Si in [11] is 2.2 µm, and the thickness of Nd2P35 in [12] is 4.0 µm so the greater film thickness does not mean greater PL intensity as long as the difference in thickness between the samples is within a certain range, which is the case here. For ease of notation the 4 F 3/2 → 4 I 9/2 emission is labeled as I 926 nm , the 4 F 3/2 → 4 I 9/2 emission is labeled as I 1070 nm and the 4 F 3/2 → 4 I 13/2 emission is labeled as I 1323 nm .…”

“…Nd 3+ : 4 F 3/2 emission spectra had been presented in [11,12] with smaller Nd 2 O 3 target areas. As was mentioned in [11,12] [12]. The thickness of Nd-Si in [11] is 2.2 µm, and the thickness of Nd2P35 in [12] is 4.0 µm so the greater film thickness does not mean greater PL intensity as long as the difference in thickness between the samples is within a certain range, which is the case here.…”

“…The films are 12.7 cm in length and subdivided in 50 sections or "positions" (P). Details on PL measurements are given in [11]. Er1P30).…”