2005
DOI: 10.1002/pssc.200461467
|View full text |Cite
|
Sign up to set email alerts
|

Spectroscopic studies of the infrared emission from Tm doped Al x Ga 1– x N thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2009
2009
2009
2009

Publication Types

Select...
1

Relationship

1
0

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 7 publications
(16 reference statements)
0
1
0
Order By: Relevance
“…At room temperature, the exponential decay component decreased slightly to values of ∼26 s and ∼20 s for above-and below-gap pumping, respectively. The slight temperature dependence of the exponential decay component can be explained by the onset of weak non-radiative decay through multi-phonon emission and/or energy transfer to defects [30]. Further studies on the red PL quenching mechanisms in GaN:Pr powders are still in progress.…”
Section: Resultsmentioning
confidence: 98%
“…At room temperature, the exponential decay component decreased slightly to values of ∼26 s and ∼20 s for above-and below-gap pumping, respectively. The slight temperature dependence of the exponential decay component can be explained by the onset of weak non-radiative decay through multi-phonon emission and/or energy transfer to defects [30]. Further studies on the red PL quenching mechanisms in GaN:Pr powders are still in progress.…”
Section: Resultsmentioning
confidence: 98%