Spectroscopic Reflectometry for Optimizing 3D Through-Silicon-Vias Process
Yi-Sha Ku,
Chun-Wei Lo,
Cheng-Kang Lee
et al.
Abstract:The main challenges in 3D metrology involve measuring TSVs etched with very high aspect ratios, where the via depth to diameter ratio approaches 10:1–20:1. In this paper, we introduce an innovative approach to enhance our in-house spectroscopic reflectometer module by integrating aperture technology, resulting in a substantial amplification of interference signals. Our system offers the flexibility to conduct measurements on an average number of TSVs, individual TSVs, or specific periodic arrays of TSVs. Addit… Show more
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