1998
DOI: 10.1016/s1386-1425(98)00131-0
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Spectroscopic properties of cerium in glasses and their comparison with crystals

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Cited by 57 publications
(41 citation statements)
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“…Absorption spectra in this study showed good agreement with previous results (Fig. 1) [7,10]. Figure 2 shows the Ce 3+ emission spectra for different CeO2 amounts.…”
Section: Light Absorption Spectrasupporting
confidence: 90%
“…Absorption spectra in this study showed good agreement with previous results (Fig. 1) [7,10]. Figure 2 shows the Ce 3+ emission spectra for different CeO2 amounts.…”
Section: Light Absorption Spectrasupporting
confidence: 90%
“…In addition to the primary PL band of Ce 3þ ions, other two very weak PL bands were also observed for the sample containing 0.58 at.% Ce. The PL band with a peak around 357 nm arises from Ce 3þ ions in a different surrounding environment [17], and the PL band with a peak localized at 501 nm results from the defects in silica matrix [19]. Similar to the previous analysis in this section, high Ce concentrations may lead to the concentration quenching effect.…”
Section: Introductionsupporting
confidence: 57%
“…Also, a slight red shift in the peak position is observed as the Ce concentrations rise from 0.09 to 0.23 at.%. The 5d electron of the Ce ions in excited states is strongly affected by the ligand field of matrix materials, so, the luminescence wavelength of Ce 3þ ions is very sensitive to the surrounding environment [16][17][18]. It has been reported that Ce 3þ ions emit a shorter PL wavelength when their surrounding environment is composed mainly of Ce 4þ ions rather than Ce 3þ ions [16].…”
Section: Introductionmentioning
confidence: 99%
“…As such, Cebased materials can have many different applications such as phosphors for cathodoluminescence, scintillators, detectors for ionizing radiation or emitters/absorbers in the UV range [7,8]. Ce-doped silica glasses or nanoparticles have been mainly prepared by the sol-gel technique [7,[9][10][11][12][13]. Alternatively, cerium oxide films were grown directly on Si (111) substrates by pulsed laser deposition [14] or on Si(100) substrates by radio-frequency sputtering [15].…”
Section: ) Introductionmentioning
confidence: 99%