Spectroscopic investigations of MOVPE-grown InGaAs/GaAs quantum wells with low and high built-in strain

Sharma, T. K.; Singh, S. D.; Porwal, S.; Nath, Ashish Kumar

doi:10.1016/j.jcrysgro.2006.10.073

Cited by 12 publications

(9 citation statements)

References 9 publications

(14 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This peak corresponds to the GaAs peak located at ∆ω ∼ -8000 arc-sec in the (224) RC, which is diffracted from fully relaxed GaAs epitaxial material. The shape of the GaAs peak in the (224) RC is asymmetric and thus can be associated with the presence of azimuthal anisotropy of the elastic strain distribution [16]. Detailed analysis of the (224) RC reveals that the GaAs epitaxial is in slightly compressive stress with 99% relaxation.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Multi-technique characterisation of MOVPE-grown GaAs on Si

Wong

Bennett

McNally

et al. 2011

Microelectronic Engineering

View full text Add to dashboard Cite

The heterogeneous integration of III-V materials on a Si CMOS platform offers tremendous prospects for future high speed and low power logic applications. That said this integration generates immense scientific and technological challenges. In this work multi-technique characterisation is used to investigate properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Si substrates -(100) with 4: offset towards <110> -under various growth conditions. This being a crucial first step towards the production of III-V template layers with a relatively lower density of defects for selective epitaxial overgrowth of device quality material. The optical and structural properties of heteroepitaxial GaAs are first investigated by micro-Raman spectroscopy and photoluminescence and reflectance measurements. High-resolution X-ray diffraction (HR-XRD) is used to investigate structural properties. Advanced XRD techniques, including double-axis diffraction and X-ray crystallographic mapping are used to evaluate degrees of relaxation and distribution of the grain orientations in the epilayers, respectively. Results obtained from the different methodologies are compared in an attempt to understand growth kinetics of the materials system. The GaAs overlayer grown with annealing at 735:C following As predeposition at 500:C shows the best crystallinity. Close inspection confirms the growth of epitaxial GaAs preferentially oriented along (100) embedded in a highly-textured polycrystalline structure.

show abstract

Section: Resultsmentioning

confidence: 99%

“…If fringes are forbidden it is typically an indication of defective GaAs layers [16] due to the various issues encountered in heteroepitaxial growth of GaAs on Si.…”

Section: Resultsmentioning

confidence: 99%

Multi-technique characterisation of MOVPE-grown GaAs on Si

Wong

Bennett

McNally

et al. 2011

Microelectronic Engineering

View full text Add to dashboard Cite

show abstract

“…6 However, to date, very little is known about the influence of In composition on the optical properties of highly strained In x Ga 1−x As/ GaAs QWs grown by MOVPE using SPS. 7,8 In this work, we report a systematic temperaturedependent SPS characterization of four InGaAs/GaAs double quantum well ͑DQW͒ structures in the temperature range between 20 and 300 K. A comprehensive analysis of the anomalous phenomena appearing in lower temperature surface photovoltage ͑SPV͒ spectra enables us to evaluate directly the band lineup of DQW structures.…”

Section: Temperature Dependent Surface Photovoltage Spectroscopy Charmentioning

confidence: 99%

Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy

Chan

Huang

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inStrain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature J. Appl. Phys. 110, 113501 (2011); 10.1063/1.3663309 Erratum: "Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs/GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy" [Appl. Phys. Lett. 89, 203110 (2006)] Appl. Phys. Lett. 92, 059901 (2008); 10.1063/1.2841828 Spectroscopic characterization of 1.3 μ m GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy Appl. Phys. Lett. 86, 092106 (2005); 10.1063/1.1868866Effect of growth temperature on strain barrier for metalorganic vapor phase epitaxy grown strained InGaAs quantum well with lattice matched InGaAsP barriers Photoluminescence microscopy imaging of tensile strained In 1−x Ga x As y P 1−y / InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy Highly strained In x Ga 1−x As/ GaAs double quantum well ͑DQW͒ structures grown by metal organic vapor phase epitaxy with different In compositions are investigated by surface photovoltage spectroscopy ͑SPS͒ in the temperature range 20-300 K. A lineshape fit of spectral features in the differential surface photovoltage ͑SPV͒ spectra determines the transition energies accurately. A comprehensive analysis of the anomalous phenomena appearing in lower temperature SPV spectra enable us to evaluate directly the band lineup of DQW and to remove the ambiguity in the identification of spectral features. The process of separation of carriers within the QW with possible capture by the interface defect traps plays an important role for phase change in SPV signal in the vicinity of light-hole related feature at low temperature. The results demonstrate the considerable diagnostic values of the SPS technique for characterizing these highly strained DQW structures.

show abstract

“…1 Because it offers a wide, direct band gap, high carrier mobility, and high reliability, [2][3][4] it is widely used in infrared detectors, [5][6][7] solar cells, 8 and transistors. [9][10][11] In recent years, III-V compound films have often been produced using epitaxial growth, 12,13 with techniques such as metalorganic chemical vapor deposition (MOCVD or MOVPE) [14][15][16][17] and molecular beam epitaxy (MBE). [18][19][20] However, for these methods, the lattice mismatch between the In x Ga 1x As thin film and the substrate is the most important problem to be solved.…”

Section: Introductionmentioning

confidence: 99%

Synthesizing InxGa1−xAs using molten In and GaAs by the sessile drop method at 400–600 °C

Zhao

Ding

et al. 2017

AIP Advances

View full text Add to dashboard Cite

We studied the surface reaction between metallic In and a single-crystal GaAs substrate at 400–600 °C induced by the improved sessile drop method. Studying the surface morphology and microstructure using scanning electron microscopy, we found that many large particles had formed on the GaAs substrate, indicating a violent reaction between the In and GaAs. This reaction became more violent with increasing temperature. Characterizing the generated phases by X-ray diffraction and transmission electron microscopy, we identified the particles as InxGa1−xAs compounds. Our results show that indium (In) reacted with single-crystal GaAs through this method to form InxGa1−xAs compounds. Moreover, during the synthesis of InxGa1−xAs by the sessile drop method, the molten In and GaAs exhibited wettability at 400–600 °C. This experiment lays the foundation for synthesizing InxGa1−xAs compounds only using the metal In and GaAs substrate by a simple method.

show abstract

Spectroscopic investigations of MOVPE-grown InGaAs/GaAs quantum wells with low and high built-in strain

Cited by 12 publications

References 9 publications

Multi-technique characterisation of MOVPE-grown GaAs on Si

Multi-technique characterisation of MOVPE-grown GaAs on Si

Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy

Synthesizing InxGa1−xAs using molten In and GaAs by the sessile drop method at 400–600 °C

Contact Info

Product

Resources

About