Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC

Lauer, V.; Brémond, G.; Souifi, A.; Guillot, G.; Chourou, K; Madar, R.; Clerjaud, B.

doi:10.4028/www.scientific.net/msf.338-342.635

Cited by 11 publications

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“…The charge states of vanadium in SiC are detected by several different techniques including infrared absorption (IR) and electron paramagnetic resonance (EPR) spectroscopies [1][2][3][4][5][6]. In past years, Lauer and coworkers attributed absorption peaks of vanadium-doped 6H-SiC at 0.893 eV and 0.917 eV to the two cubic sites of V 4+ and one at 0.948 eV to the hexagonal site of V 4+ .…”

Section: E D E Amentioning

confidence: 99%

A study of V³⁺ and the Vanadium acceptor level in semi-insulating 6H-SiC

Lee

Zvanut

2005

MRS Proc.

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Infrared absorption (IR) and electron paramagnetic resonance (EPR) spectroscopies are used to study the V 3+ impurity and the vanadium acceptor level in 6H semi-insulating SiC. IR and EPR data obtained from samples cut from the same wafer support the assignment of the 0.60 and 0.62 eV IR absorption lines to substitutional V 3+ . Photo-induced EPR measurements reveal identical photo-thresholds for V 3+ and V 4+ ions. A peak at 0.8 eV, where the intensity of the three plus charge state decreases and the four plus charge state increases by an equal amount, is thought to represent excitation of an electron from V 3+ to the conduction band edge. The 0.8 eV peak is therefore attributed to the V 3+/4+ level. The difference between the optically measured value reported here and that measured previously using temperature dependent techniques is attributed thermal relaxation.

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Section: E D E Amentioning

confidence: 99%

A study of V³⁺ and the Vanadium acceptor level in semi-insulating 6H-SiC

Lee

Zvanut

2005

MRS Proc.

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“…9,15 From the Racah parameters B 0 Ӎ861 cm Ϫ1 , C 0 Ӎ4165 cm Ϫ1 for free V 3ϩ ion ͑Ref. 16͒ and the d-d transition spectra for V 3ϩ in 4H-and 6H-SiC crystals, 17 we have for 4H-SiC:V 3ϩ ,…”

Section: Calculations For Various V 3¿ Centers In Sic Polytypesmentioning

confidence: 99%

“…Considering the energy differences between 3 A 2 state of V 3ϩ and the conduction band for both SiC polytypes, 17 we set E n Ӎ6700 cm Ϫ1 for 4H-SiC:V 3ϩ and E n Ӎ6000 cm Ϫ1 for 6H-SiC:V 3ϩ . By use of the Slater-type self-consistent-field functions 18,19 and the average metal-ligand distances ͑with cubic approximation͒ in both SiC crystals, we calculate the group overlap integrals S dp () and S dp ().…”

Section: Calculations For Various V 3¿ Centers In Sic Polytypesmentioning

confidence: 99%

Electron paramagnetic resonance parameters for variousV3+centers in4H- and
Zheng
¹
,
Wu
²
,
Ming
³

et al. 2002
Phys. Rev. B
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In this paper, the complete high-order perturbation formulas of electron-paramagnetic-resonance ͑EPR͒ parameters ͑zero-field splittings and g factors͒ for 3d 2 ion in trigonal tetrahedral clusters have been derived from a cluster approach. In these formulas, not only the contribution due to crystal-field mechanism, but also the contributions due to charge-transfer mechanism ͑which is neglected in the crystal-field theory͒ are included. From these formulas, the g shifts ⌬g ʈ (ϭg ʈ Ϫg e ), ⌬g Ќ (ϭg Ќ Ϫg e ) and the zero-field splittings D for various V 3ϩ centers in 4H-and 6H-SiC crystals are reasonably explained. It is found that in the studies of EPR parameters for 3d 2 ions ͑particularly, in the case of ions having high valence state͒ in strong covalency crystals, both the contribution due to crystal-field mechanism and that due to charge-transfer mechanism should be taken into account.

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“…[3][4][5][6][7][8] Photo-ESR spectroscopy indicated that the vanadium donor level is located at E v + 1.6 eV in 6H-SiC. 3 Evwaraye and co-workers conducted OAS measurements below room temperature and reported vanadium donor levels at E v + 1.73 eV and E v + 1.55 eV in n-type 4H-SiC and p-type 6H-SiC, respectively.…”

Section: Introductionmentioning

confidence: 95%

“…4,5 Lauer and co-workers performed DLTS measurements on vanadiumdoped 6H-SiC that revealed two levels related to the vanadium acceptor level, E c ) 0.68 eV and E c ) 0.74 eV in 6H-SiC. 6 Studying n-type ion implanted 6H-SiC, Achtziger and co-workers suggested that the vanadium acceptor levels are located at E c ) 0.71 eV and E c ) 0.74 eV in 6H-SiC. 7 Jenny and co-workers attribute the activation energy of 0.66 eV deduced from the temperature-dependent Hall resistivity to the V 3+/4+ level in 6H-SiC and reported the acceptor position to be 0.80 eV below the conduction band edge in 4H-SiC.…”

Section: Introductionmentioning

confidence: 98%

A Study of Deep Defect Levels in Semi-Insulating SiC Using Optical Admittance Spectroscopy

Lee

Zvanut

2007

Journal of Elec Materi

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Optical admittance spectroscopy (OAS), supported by electron paramagnetic resonance (EPR) measurements, is used to identify the controversial vanadium acceptor levels in vanadium-doped semi-insulating (SI) 4H-SiC and 6H-SiC. The V 3+/4+ levels for the cubic site are likely located at E c ) 0.67 ± 0.02 eV and E c ) 0.70 ± 0.02 eV in 6H-SiC and E c ) 0.75 ± 0.02 eV in 4H-SiC. A peak at 0.87 ± 0.02 eV in the 6H-SiC is tentatively assigned to the same transition at the hexagonal site and the associated transition in 4H-SiC is thought to occur near 0.94 eV. All assignments are supported by the observation of V 3+ in the EPR spectrum.

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Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC

Cited by 11 publications

References 0 publications

A study of V³⁺ and the Vanadium acceptor level in semi-insulating 6H-SiC

A study of V³⁺ and the Vanadium acceptor level in semi-insulating 6H-SiC

Electron paramagnetic resonance parameters for variousV3+centers in4H- and
Zheng
¹
,
Wu
²
,
Ming
³

et al. 2002
Phys. Rev. B
3
0
0
0
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A Study of Deep Defect Levels in Semi-Insulating SiC Using Optical Admittance Spectroscopy

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Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC

Cited by 11 publications

References 0 publications

A study of V3+ and the Vanadium acceptor level in semi-insulating 6H-SiC

A study of V3+ and the Vanadium acceptor level in semi-insulating 6H-SiC

Electron paramagnetic resonance parameters for variousV3+centers in4H- andZheng1, Wu2, Ming3 et al. 2002Phys. Rev. B3000View full textAdd to dashboardCite

A Study of Deep Defect Levels in Semi-Insulating SiC Using Optical Admittance Spectroscopy

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A study of V³⁺ and the Vanadium acceptor level in semi-insulating 6H-SiC

A study of V³⁺ and the Vanadium acceptor level in semi-insulating 6H-SiC

Electron paramagnetic resonance parameters for variousV3+centers in4H- and
Zheng
¹
,
Wu
²
,
Ming
³

et al. 2002
Phys. Rev. B
3
0
0
0
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