Spectroscopic ellipsometry of TaNx and VN films

Mistrı́k, Jan; Takahashi, Kunimitsu; Antoš, Roman; Aoyama, Mitsuru; Yamaguchi, Tomuo; Anma, Y.; Takeyama, Mayumi B.; Noya, Atsushi; Jiang, Zhong Tao; Thurgate, S.M.; Riessen, Grant van

doi:10.1016/j.tsf.2003.11.245

Cited by 15 publications

(15 citation statements)

References 11 publications

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“…For example, for conductive materials information on the electric film properties such as resistivity and electron mean free path can be extracted during the deposition process. 21 This kind of information has recently also been extracted by SE for sputtered TaN x films, as reported by Aouadi and Debessai 22 and Mistrik et al 23 The plasma-assisted ALD process also yields the possibility to use plasma-related diagnostics during the plasma exposure step. In our previous work on plasmaassisted ALD of Al 2 O 3 from a metal-organic precursor and O 2 plasma, we showed that optical emission spectroscopy can yield information on the ALD reaction mechanisms and the timing of the plasma step.…”

Section: Introductionmentioning

confidence: 76%

“…The Lorentz oscillators account for the interband absorption by bound electrons. Following the literature on PVD TaN films, 22,23 we used a combination of one Drude and two Lorentz oscillators to describe the dielectric function of the conductive TaN x deposited by ALD:…”

Section: Conductive Tan X Filmsmentioning

confidence: 99%

“…For TaN x , the two Lorentz oscillators account for interband absorptions around 2.2 and 6.4 eV. 22,23 The imaginary ͑ 2 ͒ part of the dielectric function for a typical TaN x film with a low resistivity is shown in Fig. 2͑a͒ and the contributions of the Drude and Lorentz oscillators are indicated.…”

Section: Conductive Tan X Filmsmentioning

confidence: 99%

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Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Langereis

Knoops

Mackus

et al. 2007

Journal of Applied Physics

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Remote plasma atomic layer deposition (ALD) of TaNx films from Ta[N(CH3)2]5 and H2, H2-N2, and NH3 plasmas is reported. From film analysis by in situ spectroscopic ellipsometry and various ex situ techniques, data on growth rate, atomic composition, mass density, TaNx microstructure, and resistivity are presented for films deposited at substrate temperatures between 150 and 250°C. It is established that cubic TaNx films with a high mass density (12.1gcm−3) and low electrical resistivity (380μΩcm) can be deposited using a H2 plasma with the density and resistivity of the films improving with plasma exposure time. H2-N2 and NH3 plasmas resulted in N-rich Ta3N5 films with a high resistivity. It is demonstrated that the different TaNx phases can be distinguished in situ by spectroscopic ellipsometry on the basis of their dielectric function with the magnitude of the Drude absorption yielding information on the resistivity of the films. In addition, the saturation of the ALD surface reactions can be determined by monitoring the plasma emission, as revealed by optical emission spectroscopy.

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Section: Introductionmentioning

confidence: 76%

Section: Conductive Tan X Filmsmentioning

confidence: 99%

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Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Langereis

Knoops

Mackus

et al. 2007

Journal of Applied Physics

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“…The Ta-N system includes several phases, the most well known and studied are the hcp Ta 2 N, 18 the stable hexagonal -TaN, [18][19][20] and the metastable cubic rocksalt ␦-TaN ͑or B 1 -NaCl͒, [18][19][20][21][22][23][24][25] which is equivalent to the very well-known rocksalt TiN, CrN, and ZrN; more N-rich phases may be also formed. 18,26 Although ␦-TaN is not the ground energy phase of the Ta-N system, it has been successfully grown by sputtering [10][11][12][13][14][22][23][24]27 and atomic layer deposition, 1,21,28-31 either epitaxially on MgO͑100͒ or in polycrystalline form.…”

Section: Introductionmentioning

confidence: 99%

Optical properties, structural parameters, and bonding of highly textured rocksalt tantalum nitride films

Matenoglou

Κουτσοκέρας

Lekka

et al. 2008

Journal of Applied Physics

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Articles you may be interested inComparative analysis of electronic structure and optical properties of crystalline and amorphous silicon nitrides Tantalum nitride is an interesting solid with exceptional properties and it might be considered as a representative model system of the d 3 s 2 transition metal nitrides. In this work highly textured, stoichiometric, rocksalt TaN͑111͒ films have been grown on Si͑100͒ by pulsed laser deposition. The films were under a triaxial stress, which has been determined by the sin 2 method. The stress-free lattice parameter was found to be 0.433Ϯ 0.001 nm, a value which has been also determined by ab initio calculations within the local spin density approximation. The optical properties of TaN have been studied using spectroscopic ellipsometry and detailed band structure calculations. The electron conductivity of TaN is due to the Ta 5dt 2g band that intercepts the Fermi level and is the source of intraband absorption. The plasma energies of fully dense rocksalt TaN were found to be 9.45 and 9.7 eV based on the experimental results and ab initio calculations, respectively. Additional optical absorption bands were also observed around 1.9 and 7.3 eV and attributed to be due to crystal field splitting of the Ta 5d band ͑t 2g → e g transition͒ and the N p → Ta d interband transition, respectively.

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“…Woollam), and the Drude-Lorentz model was selected as a model for the optical properties of the nitride material. The Drude-Lorentz model has been successfully applied to nitride thin films [37,38].…”

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confidence: 99%

Bis(tert‐butylimido)‐bis(dialkylamido) Complexes of Molybdenum as Atomic Layer Deposition (ALD) Precursors for Molybdenum Nitride: the Effect of the Alkyl Group

Miikkulainen¹,

Suvanto²,

Pakkanen³

2008

Chemical Vapor Deposition

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Bis(tert-butylimido)-bis(diethylamido)molybdenum [(, possible precursors for atomic layer deposition (ALD) of molybdenum nitride, are synthesized and characterized. Calorimetric studies are carried out to examine the thermal stability of the new precursor candidates. For the diethylamido complex, sufficient thermal stability is found, ALD tests are performed, and satisfactory parameters for controlled growth are identified. Films grown from bis(tert-butylimido)-bis(diethylamido)molybdenum and ammonia are amorphous, smooth, and conformal. The di-isopropylamido complex shows thermal instability and a very low synthetic yield, hence it is not tested in ALD. Possible decomposition reactions of the precursors are studied by density functional theory (DFT) calculations. The computational results support the low thermal stability of di-isopropylamido complex found through calorimetric studies.

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Spectroscopic ellipsometry of TaNx and VN films

Cited by 15 publications

References 11 publications

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Optical properties, structural parameters, and bonding of highly textured rocksalt tantalum nitride films

Bis(tert‐butylimido)‐bis(dialkylamido) Complexes of Molybdenum as Atomic Layer Deposition (ALD) Precursors for Molybdenum Nitride: the Effect of the Alkyl Group

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