Spectroscopic ellipsometry of single and multilayer amorphous germanium/aluminum thin film systems

Al-Mahasneh, A.A.; Al-Attar, Hameed A.; Shahin, I. S.

doi:10.1016/s0030-4018(03)01349-x

Cited by 7 publications

(12 citation statements)

References 14 publications

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“…SE is the primary tool to determine the optical properties and structure of materials [9], in many cases utilizing the in situ capabilities [10,11]. Concerning amorphous Ge (a-Ge) films, papers dealing with the optical and structural characterization of evaporated Ge layers can be found in the literature [12][13][14][15][16], and only a few papers discuss the optical and structural characterization of a-Ge layers obtained by low energy (0.5-1.0 keV) ion bombardment [17,18]. Aspnes and Studna irradiated single-crystalline Ge (c-Ge) surfaces using Ne and Ar ions with 1 keV energy.…”

Section: Introductionmentioning

confidence: 99%

Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic Ellipsometry

et al. 2020

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Accurate reference dielectric functions play an important role in the research and development of optical materials. Libraries of such data are required in many applications in which amorphous semiconductors are gaining increasing interest, such as in integrated optics, optoelectronics or photovoltaics. The preparation of materials of high optical quality in a reproducible way is crucial in device fabrication. In this work, amorphous Ge (a-Ge) was created in single-crystalline Ge by ion implantation. It was shown that high optical density is available when implanting low-mass Al ions using a dual-energy approach. The optical properties were measured by multiple angle of incidence spectroscopic ellipsometry identifying the Cody-Lorentz dispersion model as the most suitable, that was capable of describing the dielectric function by a few parameters in the wavelength range from 210 to 1690 nm. The results of the optical measurements were consistent with the high material quality revealed by complementary Rutherford backscattering spectrometry and cross-sectional electron microscopy measurements, including the agreement of the layer thickness within experimental uncertainty.

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Section: Introductionmentioning

confidence: 99%

Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic Ellipsometry

et al. 2020

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“…o f amorphous semiconductors on the preparation conditions [17], which can partly be attributed to the presence of a micro-and nanocrystalline component [18]. The dependence of structural and optical properties of Ge on the preparation conditions and the thickness has also been shown for Ge in many works including the investigation of rf glow-discharge deposited [19], ion implantation amorphized [20], multi-layered [21], gold mediated [22], and a range of other non-single crystal Ge structures. The studies reveal significant differences depending on the preparation methods, and parameters including layer thickness [23].…”

Section: Resultsmentioning

confidence: 89%

Optical and structural characterization of Ge clusters embedded in ZrO2

Agócs

Zolnai

Rossall

et al. 2017

Applied Surface Science

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The change of optical and structural properties of Ge nanoclusters in ZrO 2 matrix have been investigated by spectroscopic ellipsometry versus annealing temperatures. Radio-frequency top-down magnetron sputtering approach was used to produce the samples of different types, i.e. single-layers of pure Ge, pure ZrO 2 and Ge-rich-ZrO 2 as well as multi-layers stacked of 40 periods of 5-nm-Ge-rich-ZrO 2 layers alternated by 5-nm-ZrO 2 ones. Germanium nanoclusters in ZrO 2 host were formed by rapid-thermal annealing at 600-800 • C during 30 s in nitrogen atmosphere. Reference optical properties for pure ZrO 2 and pure Ge have been extracted using single-layer samples. Asdeposited multi-layer structures can be perfectly modeled using the effective medium theory. However, annealed multi-layers demonstrated a significant diffusion of elements that was confirmed by medium energy ion scattering measurements. This fact prevents fitting of such annealed structure either by homogeneous or by periodic multi-layer models.

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“…Recently, in an Auger electron spectroscopy study the complementarity of both methods was analyzed 28 . Besides determination of the optical properties 14,15,23,29 , frequently in SiGe alloys 6,11,12 , used in optics or optoelectronics, optical methods are also capable of indirectly determining material properties, such as the crystallinity 19 , disorder 30 or crystal size 7 . Finally, there are numerous electrical characterization methods for the quality control of Ge and Ge NC-based devices.…”

Section: Introductionmentioning

confidence: 99%

“…Owing to the non-destructive nature of ellipsometry, in-situ applications were demonstrated by many authors 35 . Albeit many papers discussed ex-situ ellipsometric characterization of Ge structures 14 , in-situ measurement of ion implantation has only been studied by Hu et al upon cleaning and layer removal by He 36 and Ar 37 ions. In their work Hu et al characterized the etching and damage evolution in the top 10 nm of native and oxidized Si wafers during the implantation with low energy (300-1200 eV) Ar 37 ions by in-situ SE.…”

Section: Introductionmentioning

confidence: 99%

“…Device structures are usually prepared by subsequent deposition/implantation 14,15 and lithography processes. Ion implantation is used for the controlled doping or modi cation of crystallinity 16 , Due to the fact that both energy and uence of the ion beam can be precisely controlled, the material properties obtained by ion implantation are highly reproducible.…”

Section: Introductionmentioning

confidence: 99%

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In-Situ Control of Defect Dynamics By Ellipsometry During Ion Implantation – Evolution of Disorder and Cavity Structure in Single-Crystalline Ge During Implantation of Sb Ions

Lohner¹,

Németh²,

Zolnai³

et al. 2020

Preprint

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Ion implantation has been a key technology in microelectronics and generally, for the controlled surface modification of materials for tribology, biocompatibility, corrosion resistance and many more. In this work in-situ spectroscopic ellipsometry was used for accurately tracking and on-line evaluating the accumulation of voids and damage in crystalline Ge during implantation of 200-keV Sb+ ions at a total fluence of 1016 cm− 2 using an ion flux of 2.1 × 1012 cm− 2s− 1. The phases of damage accumulation were identified using unique optical multi-layer models describing the layer structure and composition. The formation of initial partial disorder was followed by complete amorphization and void formation occurring at the fluence of 1 × 1015 cm− 2, reaching a high volume fraction of voids and a layer thickness of ≈ 200 nm by the end of the process. This agrees with numerical simulations and results of complementary measurements including ion beam analysis and electron microscopy. The developed in-situ method for controlling the dynamics of structural damage accumulation is a versatile ion-implantation tool for avoiding adverse void formation and for controlled evolution of subsurface nanocavities or cellular surface texture alike.

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Spectroscopic ellipsometry of single and multilayer amorphous germanium/aluminum thin film systems

Cited by 7 publications

References 14 publications

Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic Ellipsometry

Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic Ellipsometry

Optical and structural characterization of Ge clusters embedded in ZrO2

In-Situ Control of Defect Dynamics By Ellipsometry During Ion Implantation – Evolution of Disorder and Cavity Structure in Single-Crystalline Ge During Implantation of Sb Ions

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