Spectroscopic ellipsometry for in-line monitoring of silicon nitrides

Cook, Charles F.; Daly, Terry; Liu, Ran; Canonico, M.; Gregory, R. B.; Zollner, Stefan

doi:10.1016/j.tsf.2003.11.265

Cited by 12 publications

(4 citation statements)

References 1 publication

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“…Sharp peak at 520 cm −1 is of Si (substrate used for deposition) with two peaks around 480 and 950 cm −1 confirming the presence of ␤-phase amorphous SiN. Wada et al [28], Zerr et al [2] and Cook et al [29] have attributed presence of peak at 900-1000 cm −1 to Si-N bond. Further, Muraki et al [30] have reported 950 cm −1 peak to be of ␤-phase SiN.…”

Section: Resultsmentioning

confidence: 93%

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD

Kshirsagar

Nyaupane

Bodas

et al. 2011

Applied Surface Science

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Section: Resultsmentioning

confidence: 93%

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD

Kshirsagar

Nyaupane

Bodas

et al. 2011

Applied Surface Science

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“…Ellipsometry is a common approach to managing the thickness of the transparent and translucent films used in the semiconductor manufacturing process because this method is fast and nondestructive 5,6 . The film thickness can be calculated from measuring optical constants, such as the reflection coefficients and phase changes, by detecting the polarized light reflected from the thin film.…”

Section: Introductionmentioning

confidence: 99%

Advanced measurement and diagnosis of the effect on the underlayer roughness for industrial standard metrology

Kim

Moon

Kim

et al. 2019

Sci Rep

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In current nanoscale semiconductor fabrications, high dielectric materials and ultrathin multilayers have been selected to improve the performance of the devices. Thus, interface effects between films and the quantification of surface information are becoming key issues for determining the performance of the semiconductor devices. In this paper, we developed an easy, accurate, and nondestructive diagnosis to investigate the interface effect of hafnium oxide ultrathin films. A roughness scaling method that artificially modified silicon surfaces with a maximum peak-to-valley roughness range of a few nanometers was introduced to examine the effect on the underlayer roughness. The critical overlayer roughness was be defined by the transition of RMS roughness which was 0.18 nm for the 3 nm thick hafnium oxide film. Subsequently, for the inline diagnostic application of semiconductor fabrication, the roughness of a mass produced hafnium film was investigated. Finally, we confirmed that the result was below the threshold set by our critical roughness. The RMS roughness of the mass produced hafnium oxide film was 0.11 nm at a 500 nm field of view. Therefore, we expect that the quantified and standardized critical roughness managements will contribute to improvement of the production yield.

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“…21) The proposed model is widely used for assessing the thickness of thin SiN films in the fabrication of advanced electronic devices. 22,23) However, no effect of PID is embedded in the proposed model. For the PID analyses of SiOC 9) and Si, 24) the effective dielectric function (" eff ) should be implemented to define the optical model for assessing the thickness and=or the oxide layer.…”

Section: Optical Characterization Of Damaged Layermentioning

confidence: 99%

Optical and electrical characterization methods of plasma-induced damage in silicon nitride films

Kuyama

Eriguchi

2018

Jpn. J. Appl. Phys.

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We proposed evaluation methods of plasma-induced damage (PID) in silicon nitride (SiN) films. The formation of an oxide layer by air exposure was identified for damaged SiN films by X-ray photoelectron spectroscopy (XPS). Bruggeman's effective medium approximation was employed for an optical model consisting of damaged and undamaged layers, which is applicable to an in-line monitoring by spectroscopic ellipsometry (SE). The optical thickness of the damaged layer -an oxidized layer -extended after plasma exposure, which was consistent with the results obtained by a diluted hydrofluoric acid (DHF) wet etching. The change in the conduction band edge of the damaged SiN films was presumed from two electrical techniques, i.e., current-voltage (I-V) measurement and time-dependent dielectric breakdown (TDDB) test with a constant voltage stress. The proposed techniques can be used for assigning the plasma-induced structural change in an SiN film widely used as an etch-protecting layer.

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Spectroscopic ellipsometry for in-line monitoring of silicon nitrides

Cited by 12 publications

References 1 publication

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD

Advanced measurement and diagnosis of the effect on the underlayer roughness for industrial standard metrology

Optical and electrical characterization methods of plasma-induced damage in silicon nitride films

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