Spectroscopic ellipsometry for depth profiling of ion implanted materials

Vanhellemont, Jan; Roussel, Ph.; Maes, H.E.

doi:10.1016/0168-583x(91)96158-h

Cited by 37 publications

(10 citation statements)

References 4 publications

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“…Some local minima can be observed, although a well-defined valley can be found around void ratios slightly below 20%. A similar limit for the maximum number of independently fitted sublayers was determined also by Vanhellemont et al 18 The locations of the cavity band determined using the different models are similar ͑Fig. Optical models of increasing complexity for sample 1.…”

Section: A Modeling and Evaluationsupporting

confidence: 77%

Optical models for cavity profiles in high-dose helium-implanted and annealed silicon measured by ellipsometry

Petrik

Fried

Lohner

et al. 2005

Journal of Applied Physics

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Study of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometryCavities created by He implantation with a dose of 5 ϫ 10 16 cm −2 and energy of 40 keV into single-crystalline silicon and annealing at 650-1000°C for 15-60 min were characterized by multiple angles of incidence spectroscopic ellipsometry. Optical models of increasing complexity were developed assuming the cavity layer either to be homogeneous, or to have a Gaussian profile, or sublayers with independently fitted cavity ratios. Cavity profiles of different annealing conditions were compared and cross-checked by transmission electron microscopy. A strategy for the ellipsometric evaluation was proposed to reduce the computation time and the probability of getting in local minima using complex models with numerous parameters. High sensitivity on the angle of incidence was found, and the choice and the determination of the angle of incidence were discussed.

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Section: A Modeling and Evaluationsupporting

confidence: 77%

Optical models for cavity profiles in high-dose helium-implanted and annealed silicon measured by ellipsometry

Petrik

Fried

Lohner

et al. 2005

Journal of Applied Physics

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“…The basic drawback of the method is its slow convergence in the case of strongly dependent parameters which is partially compensated for by the rather simple calculations involved as compared to more sophisticated methods such as the Levenberg-Marquardt algorithm. 49 The processing time on a 486 DX 50 MHz personal computer to achieve a typical fit is below 5 mm for the most complex cases. The errors o associated with the set of parameters, introduced by the least squares procedure were calculated during the fit from the last three points along the grid search.…”

Section: Complete Incoherence Of Reflected and Transmitted Waves In M...mentioning

confidence: 99%

Structural and Compositional Characterization of High Energy Separation by Implantation of Oxygen Structures Using Infrared Spectroscopy

Siapkas

Hatzopoulos

Katsidis

et al. 1996

J. Electrochem. Soc.

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Silicon was implanted with 2 MeV O+ ions with doses covering the range from 1×1017 to 2×1018 O+ normalcm −2 , at an implantation temperature of 700°C. Subsequently, samples were capped and annealed at 1300°C. Infrared reflectance spectroscopy has been used in order to characterize the as‐implanted and annealed samples. The optical modeling of the multilayer structures and the data reduction procedure are given in detail. The thickness, chemical composition, crystallinity, interface macroscopic roughness, and refractive index profiles are quantified. It is shown that infrared reflectance spectroscopy is a quick, nondestructive, analytical, and precise method for characterizing high energy separation by implantation of oxygen (SIMOX) structures. Cross correlation with H+ beam Rutherford backscattering/channeling, secondary ion mass spectroscopy, and cross‐sectional transmission electron microscopy results, gives good agreement. The formation of oxide in the high energy region follows the same basic rules as in the standard SIMOX case. No anomalous oxygen diffusion was observed during annealing and a buried layer formed during annealing even for the lowest dose. It is found that the microstructure of the annealed samples is strongly dependent on the implantation conditions such as beam current density and that even for the highest dose of 2×1018 O+ cm− , a continuous stoichiometric silicon dioxide layer has not formed after annealing.

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“…3 Dividing the damaged region into sublayers, the measurement of the damage distribution is also possible. SE was applied by numerous research groups for the nondestructive determination of damage depth profiles in GaAs, 4 in Si [5][6][7][8][9] or even in polysilicon. 10 The free parameters of the optical models are reduced if the depth distribution of the i ϪaϪSi/cϪSi ratio of the sublayers is described by a coupled half-Gaussian function in the damaged region.…”

Section: Introductionmentioning

confidence: 99%

Ellipsometric characterization of damage profiles using an advanced optical model

Petrik

Polgár

Fried

et al. 2003

Journal of Applied Physics

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Articles you may be interested inStudy of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometry J. Appl. Phys. 99, 123514 (2006); 10.1063/1.2207688Model-dielectric-function analysis of ion-implanted Si(100) wafers Crystalline to amorphous transition and band structure evolution in ion-damaged silicon studied by spectroscopic ellipsometry Damage created by ion implantation into single crystalline silicon was characterized with an optical model based on the coupled half-Gaussian model developed by Fried et al ͓J. Appl. Phys. 71, 2835 ͑1992͔͒. In the improved optical model the damage profile was described by sublayers with thicknesses inversely proportional to the slope of the profile. This method allows a better resolution at the quickly changing parts of the profile, and a better approximation of the Gaussian profile with the same number of sublayers. A fitting procedure, which we call ''multipoint random search,'' was applied to minimize the probability of getting in a local minimum. The capabilities of our method were demonstrated for amorphizing doses using different ions and energies. The improved fit quality and the correlation with results of backscattering spectrometry basically supported the optical model.

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Spectroscopic ellipsometry for depth profiling of ion implanted materials

Cited by 37 publications

References 4 publications

Optical models for cavity profiles in high-dose helium-implanted and annealed silicon measured by ellipsometry

Optical models for cavity profiles in high-dose helium-implanted and annealed silicon measured by ellipsometry

Structural and Compositional Characterization of High Energy Separation by Implantation of Oxygen Structures Using Infrared Spectroscopy

Ellipsometric characterization of damage profiles using an advanced optical model

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