Spectroscopic ellipsometry characterization of SiNx antireflection films on textured multicrystalline and monocrystalline silicon solar cells

Saenger, M. F.; Sun, Jianing; Schädel, M.; Hilfiker, James N.; Schubert, M.; Woollam, John A.

doi:10.1016/j.tsf.2009.09.042

Cited by 27 publications

(12 citation statements)

References 8 publications

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“…E g of TiAlON is almost the same, in the range of 3.6-3.7 eV when increasing the N 2 content from 15% to 30%, which is in the same order of that of TiAlO $3.4 eV (Nguyen et al, 2003). The band gap of Si 3 N 4 prepared at 20% (2.6031 eV) is in good agreement with literatures values 2.641 eV (Saenger et al, 2010), which is lower than the stochiometric Si 3 N 4 ($4.4 eV). Fig.…”

Section: Methodssupporting

confidence: 89%

Optimization of TiAlN/TiAlON/Si3N4 solar absorber coatings

Ali

Søndergaard

et al. 2015

Solar Energy

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Section: Methodssupporting

confidence: 89%

Optimization of TiAlN/TiAlON/Si3N4 solar absorber coatings

Ali

Søndergaard

et al. 2015

Solar Energy

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“…2, confirms that the optical properties of the a-Si:H layer are indeed unaffected by the underlying pyramid-shaped structure. In a previous SE characterization performed for SiN x /c-Si textured structures, on the other hand, the refractive index of the SiN x layer formed on the textured structure has been reported to decrease significantly, 7) although such effects have not been observed in our study. Figure 4 shows the total a-Si:H thickness on the textured c-Si substrate d tex , plotted as a function of the total a-Si:H thickness on the flat c-Si substrate d flat .…”

contrasting

confidence: 81%

“…Moreover, for SE characterization of thin layers deposited on c-Si textured structures, a tilt angle measurement configuration has recently been reported. 7) By adopting this method, silicon nitride (SiN x ) antireflection layers formed on c-Si textured structures have been characterized. 7) In this study, the tilt angle SE measurement has been applied to determine the structure and properties of very thin a-Si:H layers ($50 # A) deposited on pyramid-shaped single c-Si textures.…”

mentioning

confidence: 99%

Ellipsometry Characterization of Hydrogenated Amorphous Silicon Layers Formed on Textured Crystalline Silicon Substrates

Watanabe

Matsuki

Fujiwara

2010

Appl. Phys. Express

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Hydrogenated amorphous silicon (a-Si:H) layers formed on textured single crystalline silicon (c-Si) substrates have been characterized by spectroscopic ellipsometry using a tilt angle measurement configuration. The a-Si:H layer thickness determined by this technique (58 AE 2 A) shows excellent agreement with that evaluated from transmission electron microscopy (56 AE 5 A). Although no structural change has been observed between a-Si:H layers deposited on flat and textured substrates, the a-Si:H layer thickness was found to decrease by 30% on the textured substrates. The above results demonstrate that the tilt angle ellipsometry measurement is quite effective in characterizing a-Si:H layers incorporated in textured a-Si:H/c-Si heterojunction solar cells. #

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“…The lateral measurement geometry with the tilted sample as described in Saenger et al was used to characterize a‐Si:H thin films deposited on c‐Si pyramids of type A. The inclination angle of the sample for measurement equals to the side angle β of the pyramid.…”

Section: Deeper Understanding Of Optical Properties In Pyramidal Textmentioning

confidence: 99%

Optical properties and performance of pyramidal texture silicon heterojunction solar cells: Key role of vertex angles

Mrázková

Sobkowicz

Foldyna

et al. 2018

Progress in Photovoltaics

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Silicon heterojunction solar cells with pyramidal textured surfaces created by different etching conditions and their properties related to device efficiency (short-circuit current density and open-circuit voltage) are studied. An easy-to-apply model is proposed to estimate reflection losses, optimize the multilayer structure of the solar cell, and enhance photovoltaic conversion efficiency. The effects of etching treatments and pyramid geometry on overall device performance are discussed in detail. The study is completed by measurement of pyramid vertex angles of different textures. A difference from the expected and generally accepted theoretical value of 70.52°is demonstrated and explained based on observation from high-resolution transmission electron microscopy. The multilayer structure of silicon heterojunction solar cells is optimized with respect to various pyramid vertex angles, using the designed optical model to minimize absorption and reflection losses.

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Spectroscopic ellipsometry characterization of SiNx antireflection films on textured multicrystalline and monocrystalline silicon solar cells

Cited by 27 publications

References 8 publications

Optimization of TiAlN/TiAlON/Si3N4 solar absorber coatings

Optimization of TiAlN/TiAlON/Si3N4 solar absorber coatings

Ellipsometry Characterization of Hydrogenated Amorphous Silicon Layers Formed on Textured Crystalline Silicon Substrates

Optical properties and performance of pyramidal texture silicon heterojunction solar cells: Key role of vertex angles

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