Spectroscopic characterization of 1.3μm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy

Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells

“…Note that the ten-band k Á p calculation [49] in Table 1 takes into consideration the GaAsP barrier layers in the analysis, and this model for III-V semiconductor QWs used here is similar to the approach described in [50] and [51]. These results agree with recent assignments from similar polarized edge-emission PL measurements [37]. In addition, our results also show that the e1-lh1 transitions clearly have 2-D properties despite the relatively low occupation of carriers in those lh1 states.…”

“…The improved insight into the physical origin of optical transitions and their dynamics is important, as this can shed light onto the understanding on the mechanism for achieving efficient optical emission. Although there were prior works on characterizations of emission lines in steady-state photoluminescence (PL) measurements [37]- [46], as of yet, no complete work has been accomplished on the study of corresponding recombination dynamics, which intends to provide input for new approaches toward the improvement of material quality.…”