Spectroscopic and electrical analysis of spray deposited copper oxide thin films

Prakash, Adithya; S, Ganesha Krishna V; Moger, Sahana Nagappa; Mahesha, M.G.

doi:10.1016/j.mtcomm.2022.103926

Cited by 7 publications

(6 citation statements)

References 38 publications

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“…These E g values are higher than those given in the references [13,19,20]. Bhowmik et al [42], and Prakash et al [18] found that for copper oxide films produced by sol-gel and spray pyrolysis technique E g varied between 1.47 and 1.27 eV, and 1.5 and 2.03 eV versus precursor concentration respectively. Similar observations were found for films sprayed at 350 °C from copper acetate monohydrate solutions of different high molarities (0.1-0.2 mol/L) which reported the reducing of band gap from 2.55 to 2.5 eV [9].…”

Section: Transmittance Reflectance Absorption Coefficient Optical Ene...mentioning

confidence: 64%

“…Roy and Bhuiyan [24] who obtained sprayed thin films with preferential (111) planes using cupric acetate as solution source. In the same context, Prakash et al [18] got two major peaks, (−111) and (111) at the same molarity values respectively. It's clear from Fig.…”

Section: Structural Propertiesmentioning

confidence: 87%

“…The evolution of n and k with increasing of solutions molarity at λ = 750 nm (taken as reference for comparison) in Table 2. Prakash et al [18], Chala et al [38] found that the refractive index n rises as the molarity increased for CuO and ZnO thin films. Our n value was higher than those found by Prakash et al [18] which ranged between 2.83 and 2.9.…”

Section: Extinction Coefficient and Refractive Indexmentioning

confidence: 99%

“…Based on the previous studies [6,[17][18][19], the investigation of optoelectronic properties especially the dielectric function of Tenorite is too few. Herein, in this paper, copper oxide thin layers were synthesized on glass substrate by spray pyrolysis technique (SPT).…”

Section: Introductionmentioning

confidence: 99%

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Optoelectronic and Dielectric Properties of Tenorite CuO Thin Films Sprayed at Various Molar Concentrations

Ben Messaoud,

Ouahab,

Rahmane

et al. 2024

Period. Polytech. Chem. Eng.

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The work in hand presents the elaboration of CuO thin films using a home-made spray pyrolysis technique at room atmosphere. The films were synthesized on preheated glass substrate at 450 °C. The source solution molarity was varied from 0.025 to 0.1 mol/L. The films were characterized by employing X-Ray Diffraction technique, UV-Vis-NIR spectrophotometry, Scanning Electron Microscope imagery, Energy Dispersive Spectroscopy, and four-points probe techniques. The X-ray diffraction analysis confirmed that all films are polycrystalline with a preferred orientation along the plane (−111) of the monoclinic crystal structure phase of tenorite (CuO). The SEM images showed a homogeneous and smooth surface. Crystallinity and grain size were improved. The rise of solution concentration induced a reduction of transmittance and reflectance in the visible region. The energy gap, the absorption coefficient, the extinction coefficient, refractive index, dielectric constant (ԑr and ԑi) and loss energy were estimated from transmittance and reflectance data. The gap energy decreases from 2.72 to 2.56 eV. The film deposited for 0.025 mol/L exhibits the highest real part of the dielectric constant (ԑr ~ 17). The film resistivity which is in order of 102 Ω cm decreases with the increase of molar concentration. The estimated dielectric constant indicated that the resulting CuO thin films could be used as dielectric layers for optoelectronic devices working in Vis-NIR region of radiation. Furthermore, the relatively high band gap, high absorption coefficient and high conductivity of the film obtained at 0.075 mol/L, make them good candidates as absorption layers in solar cells applications.

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Section: Transmittance Reflectance Absorption Coefficient Optical Ene...mentioning

confidence: 64%

Section: Structural Propertiesmentioning

confidence: 87%

Section: Extinction Coefficient and Refractive Indexmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optoelectronic and Dielectric Properties of Tenorite CuO Thin Films Sprayed at Various Molar Concentrations

Ben Messaoud,

Ouahab,

Rahmane

et al. 2024

Period. Polytech. Chem. Eng.

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“…The size of the crystallites ( D ) in the films was calculated from size-strain plot 15 given by, in which, λ is the wavelength of X-ray, d hkl is the lattice distance, K is the shape factor, ε is micro-strain and θ is the diffraction angle. Crystallite size of the films decreased from 16 to 14 nm at 2 at% doping which further decreased to the range of 7–8 nm for higher doping concentration.…”

Section: Resultsmentioning

confidence: 99%

Development of enduring interstitial defects in Mg-doped CuO thin films

Prakash,

Mishra,

Mahesha

2024

RSC Adv.

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Thermal annealing effect on phase evolution, physical properties of DC sputtered copper oxide thin films and transport behavior of ITO/CuO/Al Schottky diodes

Jagadish,

Kekuda

2024

Appl. Phys. A

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Herein, we report on the post-annealing temperature effect on the transport behavior of p-CuO/Al Schottky barrier diodes. In addition, the transformation of phase from Cu4O3 to CuO phase was studied. Copper oxide thin films were grown on soda lime glass substrates, and post-annealing temperature's influence on the films’ structural, chemical, morphological, and electrical characteristics was comprehensively examined. X-ray diffraction study revealed the development of polycrystalline tenorite phase (CuO) on annealing. Raman analysis also confirmed the formation of the tenorite phase (CuO) at higher annealing temperatures (400 °C and 500 °C). XPS study revealed the occurrence of the Cu4O3 phase for room temperature deposited sample and CuO phase at the higher annealing temperature. Using current–voltage analysis, the Chueng model, and the thermoelectric emission model, the Schottky behavior between the metal and semiconductor were investigated. The fabricated diode showed a rectification ratio of 103 at ± 2 V, with the barrier height ranging from 0.84 to 1.12 eV due to different annealing treatments. The attributes of the power law were employed to elucidate space charge-limited conduction and the process of tunneling across the density of interface traps in p-CuO/Al Schottky diodes. This study provides valuable insights into the behavior of the p-CuO/Al Schottky junction, enhancing our understanding of its characteristics.

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Spectroscopic and electrical analysis of spray deposited copper oxide thin films

Cited by 7 publications

References 38 publications

Optoelectronic and Dielectric Properties of Tenorite CuO Thin Films Sprayed at Various Molar Concentrations

Optoelectronic and Dielectric Properties of Tenorite CuO Thin Films Sprayed at Various Molar Concentrations

Development of enduring interstitial defects in Mg-doped CuO thin films

Thermal annealing effect on phase evolution, physical properties of DC sputtered copper oxide thin films and transport behavior of ITO/CuO/Al Schottky diodes

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