Spectrophotometric investigations of optical linearity and nonlinearity of pentacene/ITO nanostructure thin film

Salem, G.F.; El-Shazly, E. A. A.; Farag, A.A.M.; Yahia, I.S.

doi:10.1016/j.ijleo.2018.08.018

Cited by 8 publications

(5 citation statements)

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“…The relationship between grain size and surface roughness is formed as Figure 5. The result indicates that as the pentacene film's roughness gradually increased, the grain size slowly increased; thus, the large grain size gave a fine crystalline structure for the pentacene film [10]. By increasing the deposition time, the roughness and grain size increased, with a better crystalline structure.…”

Section: Characteristics Of the Pentacene Structurementioning

confidence: 94%

“…There are a number of deposition processes for growing pentacene thin films. From reported studies, pentacene thin films are mostly grown using physical deposition, such as thermal evaporation [7], [10]- [14], pulsed laser deposition (PLD) [15], [16], and organic molecular beam deposition (OMBD) [16], whereas chemical deposition, such as ink-jet printing, dip coating [17], and solution-based spin coating [18], depends on preparation conditions and the material's nature. The physical evaporation techniques operate by changing the phase of the pentacene from a solid phase to the vapor phase and converting again to a solid phase on the substrate.…”

Section: Introductionmentioning

confidence: 99%

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Morphological, structural and electrical properties of pentacene thin films grown via thermal evaporation technique

et al. 2021

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The physical and structural characteristics of pentacene thin films on indium tin oxide (ITO)-coated glass were studied. The pentacene films were deposited using the thermal evaporation method with deposition times of 20, 30, and 60 minutes. Field-emission scanning electron microscopy (FESEM) images revealed that film thickness increased with deposition time, with a bulk phase layer appearing at 60 minutes. The presence of the thin-film phase corresponding to 15.5 Å lattice spacing was demonstrated by X-ray diffraction (XRD) patterns in pentacene films with deposition times of 20 and 30 minutes. Meanwhile, with a deposition time of 60 minutes and a lattice spacing of 14.5 Å, the existence of the bulk phase was verified in the pentacene film. Atomic force microscopy (AFM) images of the crystallinity of the pentacene films revealed that the pentacene films deposited on ITO-coated glass exhibited the formation of similar islands with modular grains, results in a fine crystalline structure. From the current-voltage (I-V) and current density-voltage (J-V) characteristics, the pentacene films were ohmic and that current increased as the pentacene’s thickness decreased. Pentacene films deposited on an ITO-coated glass substrate showed potential in the development of broadband and narrowband optoelectronic devices on a transparent substrate.

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Section: Characteristics Of the Pentacene Structurementioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Morphological, structural and electrical properties of pentacene thin films grown via thermal evaporation technique

et al. 2021

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“…Semiconductor technology is rapidly advancing, and organic interface metal–semiconductor Schottky diodes play a significant role as circuit elements in various electronic devices. − Their ability to operate at low voltage levels and exhibit fast-switching capabilities positions them prominently in electronic technology. , Numerous studies have explored effective device designs, considering variables such as different metal–semiconductor types, manufacturing methods, and material thicknesses . In Schottky diodes, the thin layers formed at the interfaces or in the direction of the rectifier contact significantly influence the electrical properties of the device .…”

Section: Introductionmentioning

confidence: 99%

Dielectric Properties and Electrical Characteristics of a Triphenylamine Thin Film Deposited onto a Silicon Substrate via Spin Coating

Izmirli,

Cavdar,

Dos

et al. 2024

ACS Appl. Electron. Mater.

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This paper presents a complete analysis of the electrical and dielectric attributes of the Al/TPA/p-Si/Al device fabricated by the spin-coating method. In this study, a p-type silicon (p-Si) wafer measuring 1 in. × 1 in. was utilized as the substrate. A layer of organic triphenylamine (TPA) was deposited onto the p-Si wafer. The p-Si wafer itself had a thickness of 525 μm. The TPA layer, serving as the active material, was deposited to a thickness of 170 nm. Additionally, aluminum (Al) contacts were applied to the structure, with a thickness of 150 nm. The primary objective of the current study was to investigate the electrical and dielectric characteristics of the fabricated device, with a specific emphasis on their dependencies on frequency and voltage. The capacitance and conductance of this device were experimentally evaluated at ambient temperature over a frequency spectrum spanning from 50 to 700 kHz. The dielectric variables, including permittivity, dielectric loss, alternating-current conductance, and electrical modulus, were assessed through capacitance and conductance measurements, considering their frequency dependence. Furthermore, the device underwent impedance analysis, allowing for a comprehensive examination and interpretation of its resistive, inductive, and capacitive properties. In consideration of these findings, the goal is to thoroughly investigate the dielectric and electrical characteristics of the Al/TPA/p-Si/Al device. The aim is for an organic-layered device to make significant contributions to the development of electronic devices for diverse applications in the future.

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“…Due to these remarkable characteristics, pentacene films have wide application in advanced optoelectronic and photonic devices. [33][34][35][36][37][38][39][40] In this paper, we report a computational study of new pentacene derivatives with the electron-withdrawing nitro group substituted at the 8, 9, 10. and 11 positions and the donor amine group substituted to the 2-position, see Figure 1. We analyzed the role of different substitution positions for NO 2 in tuning the electronic and optical properties, and comparing them with unsubstituted pentacene, we demonstrate that substituents broaden the absorption spectra and enhance the NLO properties.…”

Section: Introductionmentioning

confidence: 99%

“…Due to these remarkable characteristics, pentacene films have wide application in advanced optoelectronic and photonic devices. [ 33–40 ]…”

Section: Introductionmentioning

confidence: 99%

Computational study of novel pentacene derivatives: Prediction of structural, electronic, and optical properties

Petralia

Forte

2022

J of Physical Organic Chem

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Several properties of a series of novel disubstituted pentacenes, in which the substituents are donor and acceptor groups, were investigated by using the ab initio methods. In particular, the role of different substitution positions for acceptor group was explored. Calculations predict that pentacene derivatives were highly soluble and oxidatively stable than the unsubstituted pentacene. Simulated absorption spectra show that 9-nitropentacen-2-amine (PD2) exhibits three absorption bands in the ultraviolet and visible regions. In general, substituents have important impact on the first hyperpolarizability value, and a remarkable enhancement of static second hyperpolarizability is revealed in this study; however, further investigations are required to confirm this finding. Molecular dynamics simulations of the solid state suggest that a material based on 9-nitropentacen-2-amine and 10-nitropentacen-2-amine could exhibit low resistivity due to the potential amount of π-π stacking. The results emphasize the potential of using the herein studied pentacene-based compounds, with particular reference to PD2, for future applications in the optoelectronic and photonic fields.

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Spectrophotometric investigations of optical linearity and nonlinearity of pentacene/ITO nanostructure thin film

Cited by 8 publications

References 63 publications

Morphological, structural and electrical properties of pentacene thin films grown via thermal evaporation technique

Morphological, structural and electrical properties of pentacene thin films grown via thermal evaporation technique

Dielectric Properties and Electrical Characteristics of a Triphenylamine Thin Film Deposited onto a Silicon Substrate via Spin Coating

Computational study of novel pentacene derivatives: Prediction of structural, electronic, and optical properties

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