Spectrophotometric Instruments Incorporated into get 156–2015, the State Primary Standard of the Unit of Spectral Regular Transmittance, Unit of Spectral Diffuse Reflectance, and Unit of Spectral Specular Reflectance in the Range of Wavelengths from 0.2 to 20.0 μm

Dunaev, A. Yu.; Zolotarevskii, Yu. M.; Morozova, S. P.; Sapritskii, V. I.; Fidanyan, G. S.; Erikova, A. A.

doi:10.1007/s11018-019-01547-8

Cited by 5 publications

(1 citation statement)

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“…The atomic composition of the treated surface of the samples was determined by energy dispersive X-ray spectroscopy using an EDX detector mounted on SEM (Xplore EDX detector; Oxford Instruments, High Wycombe, UK). The spectral total reflectance in the wavelength range from 250 nm to 1100 nm was measured using a Perkin Elmer Lambda 900 spectrophotometer equipped with a PELA-100 integrating sphere at the spectral resolution of 5 nm [ 32 ]. The spectral transmittance of the samples was measured on a Perkin Elmer Lambda 950 spectrophotometer with a spectral resolution of 2 nm.…”

Section: Methodsmentioning

confidence: 99%

Efficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatments

et al. 2023

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Light-trapping structures formed on surfaces of various materials have attracted much attention in recent years due to their important role in many applications of science and technology. This article discusses various methods for manufacturing light-trapping “black” silicon, namely laser, chemical and hybrid chemical/laser ones. In addition to the widely explored laser texturing and chemical etching methods, we develop a hybrid chemical/laser texturing method, consisting in laser post-texturing of pyramidal structures obtained after chemical etching. After laser treatments the surface morphology was represented by a chaotic relief of microcones, while after chemical treatment it acquired a chaotic pyramidal relief. Moreover, laser texturing of preliminarily chemically microtextured silicon wafers is shown to take five-fold less time compared to bare flat silicon. In this case, the chemically/laser-treated samples exhibit average total reflectance in the spectral range of 250–1100 nm lower by 7–10% than after the purely chemical treatment.

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Section: Methodsmentioning

confidence: 99%