Spectromicroscopy of tantalum oxide memristors

Abstract

Investigation of analog memristive switching of iron oxide nanoparticle assembly between Pt electrodes

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

“…Important complementary information on the nature of the conduction channel was recently provided by hard X-ray spectromicroscopy [ 61 ] (Figure 3 f) performed on a Pt/TaO x /Pt device, which exhibited similar switching behavior as the Pt/TaO x / for details) in a low resistance state (ON state). On the resistance map, only one resistance dip of approximately 100 nm diameter (yellow-red dot) was observed, revealing that only one active switching region existed or was dominant in this device.…”

Relevance of non-equilibrium defect generation processes to resistive switching in TiO2

“…There is a consensus that for many oxide materials the low resistance state involves an oxygen deficient conductive filament that bridges the electrodes. 4,[16][17][18] In most cases, as grown devices are subjected to a forming step (in which a voltage stress is applied) to establish this filament. 11 Switching to the high resistance state then involves partial reoxidation of the filament.…”

Evidence for multifilamentary valence changes in resistive switching SrTiO3 devices detected by transmission X-ray microscopy

“…On the field of resistive switching up to now X-ray microscopy studies have only been reported for the investigation of polycrystalline devices which have been deposited on thin Si 3 N 4 membranes. 5,12 In this work we will employ bulk-sensitive NEXAFS-TXM to study the valence change in resistive switching devices based on single-crystalline SrTiO 3 thin films. Although industrial RRAM focus on amorphous or polycrystalline films grown on CMOS compatible Si, epitaxial films are very useful as a model system due to the absence of grain boundaries and a more defined defect a E-mail: a.koehl@fz-juelich.de structure.…”