With
the retention of many of the unrivaled properties of bulk
diamond but in thin-film form, nanocrystalline diamond (NCD) has applications
ranging from micro-/nano-electromechanical systems to tribological
coatings. However, with Young’s modulus, transparency, and
thermal conductivity of films all dependent on the grain size and
nondiamond content, compositional and structural analysis of the initial
stages of diamond growth is required to optimize growth. Spectroscopic
ellipsometry (SE) has therefore been applied to the characterization
of 25–75 nm thick NCD samples atop nanodiamond-seeded silicon
with a clear distinction between the nucleation and bulk growth regimes
discernable. The resulting presence of an interfacial carbide and
peak in nondiamond carbon content upon coalescence is correlated with
Raman spectroscopy, whereas the surface roughness and microstructure
are in accordance with values provided by atomic force microscopy.
As such, SE is demonstrated to be a powerful technique for the characterization
of the initial stages of growth and hence the optimization of seeding
and nucleation within films to yield high-quality NCD.