Spectral responsivity and quantum efficiency of n-ZnO/p-Si photodiode fully isolated by ion-beam treatment

Abstract

We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted Si+ ions into the n-ZnO layer. We have obtained a wide-range spectral responsivity curve for our isolated photodiodes, which showed a maximum quantum efficiency of 70% at 650 nm and a minimum of 10% at 420 nm. However, they exhibited an efficiency drop at 380 nm in the near-ultraviolet because the ZnO layers absorbed the photons of higher energy before they reached p-Si. The ion-beam-induced isolation considerably reduced dark leakage currents in our devices when the dose of Si ions was as high as 5×1015 cm−2.

Controlled Growth of High‐Quality ZnO‐Based Films and Fabrication of Visible‐Blind and Solar‐Blind Ultra‐Violet Detectors

“…[4] Because of the lack of stable and controllable p-type ZnO films, in most cases, heterojunctions were used to fabricate ZnO-based UV photodetectors with a different p-type semiconductor, such as Si. [5][6][7] However, while the n-ZnO/p-Si photodetectors that have been reported so far do have an increased UV photoresponse due to ZnO, they still have a notable photoresponse to visible light, which limits their direct application in UV detection in a visible light environment. In this study, a visible light-blind UV photodetector has been fabricated by exploiting a double heterojunction of n-ZnO/insulator-MgO/p-Si grown by molecular beam epitaxy.…”

Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal–organic chemical vapor deposition

“…Among the ZnO-based heterojunctions, the n-ZnO/p-Si structure is especially attractive due to the well-known advantage of Si substrate and its potential application in Si-based optoelectronic integrated circuits (OEICs). Up to now, the n-ZnO/p-Si structure has been extensively utilized in the applications of solar cells [21] and photodiodes [22,23]. However, to our best knowledge, there are no reports on EL in UV-visible and infrared (IR) region simultaneously from the n-ZnO/p-Si heterostructure.…”

Persistent n-type photoconductivity in p-type ZnO

“…Light emission has been demonstrated [1][2][3][4][5][6][7][8][9][10][11][12][13] in heterojunction light-emitting diodes (LEDs) using n-type ZnO and various other materials for the p-layer. However, development of higher-efficiency, homojunction devices [14] has been limited by the lack of reliable p-type ZnO which is necessary to produce p-n structures.…”