Spectral properties of proton irradiated gallium nitride blue diodes

Gaudreau, F.; Carlone, C.; Houdayer, A.; Khanna, Shyam M.

doi:10.1109/23.983130

Cited by 44 publications

(31 citation statements)

References 9 publications

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“…Khanna et al [1] presented the first explicit evidence of high radiation tolerance of GaN by investigating the radiation damage caused by 2 MeV protons on gallium nitride films through low temperature photoluminescence spectroscopy measurements. Gaudreau et al [2] measured the transport properties of a two dimensional gas formed at the AlGaN/GaN interface as well as the degradation of the light output of GaN-based light-emitting diodes (LEDs) [3]. These two works confirmed the relatively high radiation tolerance of GaN-based devices.…”

Section: Introductionmentioning

confidence: 88%

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Proton energy dependence of the light output in gallium nitride light-emitting diodes

Khanna¹,

Estan²,

Erhardt³

et al. 2004

IEEE Trans. Nucl. Sci.

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Gallium nitride (GaN)-based blue-emitting diodes (CREE Model C430-DH85) were irradiated at room temperature with protons in the energy range 2 to 115 MeV at fluences varying from 1 10 11 to 1 10 15 cm 2 . Light output degradation curves were obtained for each energy and the damage constant ( ) associated with these curves was determined according to the theory of Rose and Barnes. For proton energies less than 10 MeV, varies inversely with the proton energy ( ). At higher energies, is consistently above the 1 relationship. The change in nature of the energy dependence is attributed to nuclear interactions. Nonionizing energy loss calculations for the case of protons on GaN are presented. Good agreement between theory and experiment is obtained.Index Terms-Blue LEDs, energy dependence, gallium nitride, light emission degradation, non-ionizing energy loss (NIEL), optoelectronics, proton, quantum-well light-emitting diodes, radiation damage.

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Section: Introductionmentioning

confidence: 88%

“…All of these devices were prepared from the central part of the same processed GaN wafer. Devices from this same wafer have been investigated extensively in a separate study published previously [3].…”

Section: A Samplesmentioning

confidence: 99%

Proton energy dependence of the light output in gallium nitride light-emitting diodes

Khanna¹,

Estan²,

Erhardt³

et al. 2004

IEEE Trans. Nucl. Sci.

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“…In their work, the output power of AlGaN/InGaN/GaN green LEDs after 2 MeV proton irradiation at a dose of 1.68 × 10 12 /cm 2 was found to decrease by 40%. 166 Gaudreau et al 167 reported that 2 MeV proton irradiation at higher fluences above 3 × 10 12 /cm 2 significantly reduced the electrical and optical performance of AlGaN/ InGaN /AlGaN blue LEDs, and the light output after 9.36 × 10 14 /cm 2 proton irradiation decreased by 99.95%. They also observed that the optical properties degraded faster than the electrical properties due to an increase in non-radiative transitions through radiation-induced defect states.…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

“…[158][159][160][161][162][163][164][165][166][167][168][169][170][171] Recently, the application of GaN-based LEDs has been extended to satellite communication systems for weather forecasting or broadband data transmission due to their high radiation hardness. The materials used in GaN-based LEDs have small lattice constants (a = 3.189 Å, c = 5.186 Å for wurtzite GaN structure) due to their strong bond energies and therefore show superior resistance to damage under radiation environments due to the higher displacement energies compared with other semiconductor systems such as the GaAs used in red LEDs (a = 5.653 Å).…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

267

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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“…Increasing the proton energy from 3 MeV to 5 MeV measurably increased the dose necessary for the onset of light output degradation, most likely due to a lower energy going into elastic collisions within the active region of devices. Even higher proton doses were found necessary for changing the characteristics of proton-irradiated blue GaN/InGaN LEDs [100]. For green GaN/ InGaN LEDs [101] it was reported that 2 MeV protons produce about 40% light output decrease after a fl uence of 1.7×10 12 cm -2 .…”

Section: Radiation Effects In Gan-based Devicesmentioning

confidence: 99%

Radiation Damage in GaN‐Based Materials and Devices

Patrick

Law

Pearton

et al. 2014

Advanced Energy Materials

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A review of electron, proton and neutron damage in GaN and AlGaN materials and devices such as high electron mobility transistors and lightemitting diodes is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e., it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. In terms of heterostructures, the initial data suggests that the radiation hardness decreases in the order AlN/GaN >AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n-and p-type GaN and interaction of radiation defects with Mg acceptors, and the poor understanding of the interaction of radiation defects in doped nitrides with the dislocations always present.

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Spectral properties of proton irradiated gallium nitride blue diodes

Cited by 44 publications

References 9 publications

Proton energy dependence of the light output in gallium nitride light-emitting diodes

Proton energy dependence of the light output in gallium nitride light-emitting diodes

Review—Ionizing Radiation Damage Effects on GaN Devices

Radiation Damage in GaN‐Based Materials and Devices

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