Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power

Nguyen, Thanh-Phuong; Wenzel, H.; Brox, O.; Bugge, F.; Ressel, P.; Schiemangk, Max; Wicht, Andreas; Tien, Tran Quoc; Tränkle, G.

doi:10.3390/app8071104

Cited by 7 publications

(4 citation statements)

References 28 publications

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“…The hybrid master-oscillator power-amplifier (MOPA) design offers the benefit of using a stable resonator as laser source such as a DBR-or a DFB-ridge waveguide laser, which allow coherence lengths of more than one hundred meter [4,5]. In this case the generated output power (P < 1 W) is low enough to be passed through a miniaturized optical isolator (l ≤ 10 mm, d ≤ 5 mm) with a sufficiently high optical isolation (> 50 dB) to suppress optical feedback.…”

Section: Introductionmentioning

confidence: 99%

Hybrid semiconductor master-oscillator power-amplifiers with more than 5 W optical output power

Blume,

Müller,

Hildenstein

et al. 2024

Components and Packaging for Laser Systems X

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Semiconductor master-oscillator power-amplifiers (MOPAs) are versatile tools for various applications. We will present high-power (P > 5 W), high-coherence length (Lc > 100 m), small-sized (L ≤ 25 mm), hybrid semiconductor MOPAs at 920 nm, 976 nm, 1030 nm, 1064 nm, 1120 nm, and 1154 nm. We compare their performance to corresponding distributed Bragg reflector tapered laser and discuss strategies to extend the wavelength range.

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Section: Introductionmentioning

confidence: 99%

Hybrid semiconductor master-oscillator power-amplifiers with more than 5 W optical output power

Blume,

Müller,

Hildenstein

et al. 2024

Components and Packaging for Laser Systems X

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“…Specifically for 780 nm lasers, applications are found in atomic clocks and manipulation of Rb atoms. 1,2 Semiconductor lasers have multiple advantages over other type of lasersthey have small dimensions enabling easy integration to other systems, provide both high and low optical output powers, and tuning of the wavelength can be done with adjusting temperature or current. Nevertheless, laser diodes gain spectrum is broad, thus the emission spectrum of a laser diode contains multiple optical frequencies.…”

Section: Introductionmentioning

confidence: 99%

Optimization and fabrication of 780 nm DFB lasers for quantum systems

Ulkuniemi

Kuusela²,

Aho³

et al. 2023

Quantum Computing, Communication, and Simulation III

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Laser diode solutions for quantum systems have highly variable requirements, depending on the technology and purpose of the laser used in the applicationfor instance, quantum control of particles or molecules and excitation of the quantum systems. Requirements of the laser systems used in the mentioned applications are highly demanding, such as single-mode operation, frequency stability over operation lifetime and narrow spectral linewidth. Narrow spectral linewidth can be achieved with distributed Bragg reflector (DBR), distributed feedback (DFB) lasers and external cavities. Wavelength of laser diode and light output power can vary depending on the intended application. For further efficiency, such emitters can be fabricated in arrays, eliminating the need for multiple single-emitter chips. Individually addressability of the emitters further enhances the efficiency. Examples of different applications using laser diodes described earlier are frequency comb generation, single-photon emitters, and timing sources for picosecond pulses.In this work, we present our results in 780 nm region DFB laser diodes. Gratings were implemented within the structure, including overgrowth step. Multiple variants in grating pitch were introduced for structure and design optimization purposes. Future improvements in the device processing, design, and reliability are discussed. 780 nm region laser diodes are used in multiple quantum systems, such as atomic clocks and manipulation of Rb atoms. In addition, it can be used for terahertz wave generation.

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“…Lasers in wavelength of 780 nm are especially interesting for Rb atom manipulation used in atomic clocks. [1][2][3][4] Semiconductor laser diodes have multiple advantages over other type of laser types. For instance, they have compact size, which eases the integration to other systems, they can easily provide both high and low optical output powers, and wavelength tuning can be done by temperature or current.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of 780 nm DBR laser diodes for quantum applications

Ulkuniemi

Kuusela

Aho

et al. 2023

Photonics for Quantum 2023

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Lasers have multiple applications in the field of quantum. A few examples are cooling and repumping lasers for atoms and ions used in constructing qubits, frequency combs and atomic clocks. The performance required from a laser solution varies between the applications, however, single-mode operation, narrow spectral linewidth, and extreme frequency stability over operation lifetime are demanded for any of the applications. Use of semiconductor laser diode as a laser source offers multiple advantages, such as tunability by current and temperature, small size, and low energy consumption.Narrow spectral linewidths from semiconductor lasers can be achieved by the means of external cavities, or monolithic approaches such as distributed Bragg reflector (DBR) and distributed feedback (DFB) lasers. The selection of the most suitable solution depends on the required output power, linewidth, and mode-hop free tuning range requirements. The use of monolithic on-chip gratings for wavelength stabilization decreases system complexity and increases overall rigidity compared to external cavity solutions.In this work, we present device-level results for our 780 nm DBR laser design and compare them to the simulations. The 780 nm wavelength range is of particular interest for quantum computing due to the Rb atom D2 line. For optimization purposes, devices with varied grating designs, ridge geometries and gain area lengths were fabricated and measured. Future improvements related to device processing, design, and extending to other wavelengths are discussed.

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Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power

Cited by 7 publications

References 28 publications

Hybrid semiconductor master-oscillator power-amplifiers with more than 5 W optical output power

Hybrid semiconductor master-oscillator power-amplifiers with more than 5 W optical output power

Optimization and fabrication of 780 nm DFB lasers for quantum systems

Fabrication of 780 nm DBR laser diodes for quantum applications

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